BT169 series
Thyristors logic level
Rev. 04 — 23 August 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features
s
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
s
General purpose switching and phase control applications.
1.4 Quick reference data
s
V
DRM
, V
RRM
≤
200 V (BT169B)
s
V
DRM
, V
RRM
≤
400 V (BT169D)
s
V
DRM
, V
RRM
≤
600 V (BT169G)
s
I
T(RMS)
≤
0.8 A
s
I
T(AV)
≤
0.5 A
s
I
TSM
≤
8 A.
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
Description
anode (a)
gate (g)
cathode (k)
sym037
Simplified outline
Symbol
321
SOT54 (TO-92)
Philips Semiconductors
BT169 series
Thyristors logic level
3. Ordering information
Table 2:
Ordering information
Package
Name
BT169B
BT169D
BT169G
-
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
, V
RRM
Parameter
repetitive peak off-state voltages
BT169B
BT169D
BT169G
I
T(AV)
average on-state current
half sine wave;
T
lead
≤
83
°C;
see
Figure 1
all conduction angles;
see
Figure 4
and
5
half sine wave;
T
j
= 25
°C
prior to
surge;
see
Figure 2
and
3
t = 10 ms
t = 8.3 ms
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
[1]
Conditions
Min
-
-
-
-
Max
200
400
600
0.5
Unit
V
V
V
A
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
-
0.8
A
-
-
-
-
-
-
-
-
8
9
0.32
50
1
5
5
2
0.1
+150
125
A
A
A
2
s
A/µs
A
V
V
W
W
°C
°C
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
2 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
0.8
P
tot
(W)
0.6
2.2
2.8
0.4
4
a=
1.57
1.9
001aab446
77
T
c(max)
(°C)
89
101
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
I
T(AV)
(A)
113
α
0.2
0
0
0.1
0.2
0.3
0.4
125
0.6
a = form factor = I
T(RMS)
/I
T(AV)
.
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
10
I
TSM
(A)
8
t
t
p
T
j
initial = 25
°C
max
I
T
001aab499
I
TSM
6
4
2
0
1
10
10
2
n
10
3
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
3 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
10
3
I
TSM
(A)
10
2
I
T
001aab497
I
TSM
t
t
p
T
j
initial = 25
°C
max
10
1
10
−5
10
−4
10
−3
t
p
(s)
10
−2
t
p
≤
10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values.
001aab449
2
I
T(RMS)
(A)
1.5
1
I
T(RMS)
(A)
0.8
001aab450
(1)
0.6
1
0.4
0.5
0.2
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
≤
83
°C.
(1) T
lead
= 83
°C.
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents.
Fig 5. RMS on-state current as a function of lead
temperature; maximum values.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
4 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
5. Thermal characteristics
Table 4:
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to printed-circuit board
ambient
mounted; lead length = 4 mm
Conditions
Min
-
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
10
2
Z
th(j-lead)
(K/W)
10
001aab451
1
P
δ
=
t
p
T
10
−1
t
p
T
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6. Transient thermal impedance as a function of pulse width.
9397 750 13512
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 23 August 2004
5 of 12
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