WF2M16-XXX5
2Mx16 NOR Flash MODULE (SMD 5962-97610*)
FEATURES
Access Times of 90, 120, 150ns
Packaging:
• 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).
Fits standard 56 SSOP footprint.
• 44 pin Ceramic SOJ (Package 102)**
Sector Architecture
• 32 equal size sectors of 64KBytes each
• Any combination of sectors can be erased. Also supports
full chip erase.
Minimum 100,000 Write/Erase Cycles Minimum
Organized as 2Mx16; User Configurable as 2 x 2Mx8
Commercial, Industrial, and Military Temperature Ranges
5 Volt Read and Write
Low Power CMOS
Data# Polling and Toggle Bit feature for detection of
program or erase cycle completion.
Supports reading or programming data to a sector not being
erased.
Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation.
RESET# pin resets internal state machine to the read
mode.
Ready/Busy (RY#/BY#) output for detection of program or
erase cycle completion.
Multiple Ground Pins for Low Noise Operation
This product is subject to change without notice.
* For reference only. See table page 7.
** Package to be developed.
Note: For programming information and waveforms refer to Flash Programming 16M5 Application
Notes AN0038.
FIGURE 1 – PIN CONFIGURATIONS
WF2M16-XDAX5
56 CSOP
TOP VIEW
CS1#
A12
A13
A14
A15
NC
CS2#
NC
A20
A19
A18
A17
A16
V
CC
GND
I/O6
I/O14
I/O7
I/O15
RY/BY#
OE#
WE#
NC
I/O13
I/O5
I/O12
I/O4
V
CC
WF2M16-XXX5
44 CSOJ (DL)**
TOP VIEW
PIN DESCRIPTION
I/O0-15
A0-20
WE#
CS1-2#
OE#
V
CC
V
SS
RY/BY#
RESET#
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Select
Output Enable
Power Supply
Ground
Ready/Busy
Reset
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
NC
#RESET
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
V
CC
I/O9
I/O1
I/O8
I/O0
A0
NC
NC
NC
I/O2
I/O10
I/O3
I/O11
GND
CS1#
A12
A13
A14
A15
NC
CS2#
NC
A20
A19
A18
A17
A16
V
CC
GND
I/O6
I/O14
I/O7
I/O15
RY/BY#
OE#
WE#
NC
I/O13
I/O5
I/O12
I/O4
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
NC
#RESET
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
V
CC
I/O9
I/O1
I/O8
I/O0
A0
NC
NC
NC
I/O2
I/O10
I/O3
I/O11
GND
BLOCK DIAGRAM
I/O0-7
RESET#
WE#
OE#
A0-20
RY / B Y #
I/O8-15
2M x 8
2M x 8
** Package to be developed.
NOTE:
1. RY/BY# is an open drain output and should be pulled up to Vcc with an external resistor.
2. Address compatible with Intel 2M8 56 SSOP.
CS1#
CS2#
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 8
© 2012 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WF2M16-XXX5
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Storage Temperature
Data Retention (Mil Temp)
Endurance — write/erase cycles (Mil, Q)
Symbol
V
T
T
STG
Ratings
-2.0 to +7.0
-65 to +150
20
100,000 min.
Unit
V
°C
years
cycles
Parameter
OE# capacitance
WE# capacitance
CS# capacitance
Data I/O capacitance
Address input capacitance
CAPACITANCE
(T
A
= +25°C)
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
V
I/O
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
Max
25
25
15
15
25
Unit
pF
pF
pF
pF
pF
NOTES:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may
overshoot V
SS
to –2.0 V for periods of up to 20 ns. See . Maximum DC voltage on output and
I/O pins is V
CC
+ 0.5 V. During voltage transitions, outputs may overshoot to V
CC
+ 2.0 V for
periods up to 20 ns. See .
2. Minimum DC input voltage on A9, OE#, RESET# pins is –0.5V. During voltage transitions, A9,
OE#, RESET# pins may overshoot V
SS
to –2.0 V for periods of up to 20 ns. See Maximum DC
input voltage on A9, OE#, and RESET# is 12.5 V which may overshoot to 13.5 V for periods up
to 20 ns.
Stresses greater than those listed in this section may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods may affect device reliability.
This parameter is guaranteed by design but not tested.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Operating Temperature (Mil, Q)
Operating Temperature (Ind)
Operating Temperature (Com)
Symbol
V
CC
V
SS
V
IH
V
IL
T
A
T
A
T
A
Min
4.5
0
2.0
-0.5
-55
-40
0
Typ
5.0
0
–
–
–
–
–
Max
5.5
0
V
CC
+ 0.5
+0.8
+125°C
+85
+70
Unit
V
V
V
V
°C
°C
°C
DC CHARACTERISTICS – CMOS COMPATIBLE
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3
V
OL
V
OH
V
LKO
Conditions
V
CC
= V
CC MAX
, V
IN
= GND to V
CC
V
CC
= V
CC MAX
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz
CS# = V
IL
, OE# = V
IH
V
CC
= V
CC MAX
, CS# = V
CC
± 0.5V, f = 5MHz, RESET# = V
CC
± 0.5V
I
OL
= 12.0 mA, V
CC
= V
CC MIN
I
OH
= -2.5 mA, V
CC
= V
CC MIN
Min
Max
10
10
80
120
4.0
0.45
4.2
Unit
μA
μA
mA
mA
mA
V
V
V
0.85xV
CC
3.2
NOTES:
1. The Icc current is typically less than 4mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 8
© 2012 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WF2M16-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase (2)
Read Recovery Time before Write
V
CC
Setup Time
Chip Programming Time
Chip Erase Time (3)
Output Enable Hold Time (4)
RESET# Pulse Width
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
Min
90
0
45
0
45
0
45
20
-90
Max
Min
120
0
50
0
50
0
50
20
-120
Max
Min
150
0
50
0
50
0
50
20
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
μs
sec
sec
ns
ns
300
15
0
50
44
256
t
OEH
t
RP
10
500
10
500
0
50
300
15
0
50
44
256
10
500
300
15
44
256
AC CHARACTERISTICS – READ-ONLY OPERATIONS
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select High to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Addresses, CS# or OE# Change,
whichever is First
RESET# Low to Read Mode (1)
1.
Guaranteed by design, not tested.
Symbol
T
AVAV
T
AVQV
T
ELQV
T
GLQV
T
EHQZ
T
GHQZ
T
AXQX
T
RC
T
ACC
T
CE
T
OE
T
DF
T
DF
T
OH
T
READY
Min
90
-90
Max
90
90
40
20
20
Min
120
-120
Max
120
120
50
30
30
Min
150
-150
Max
150
150
55
35
35
Unit
ns
ns
ns
ns
ns
ns
ns
μs
0
20
0
20
0
20
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 8
© 2012 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WF2M16-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
Output Enable Hold Time (4)
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
Min
-90
Max
Min
-120
Max
Min
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
sec
sec
ns
90
0
45
0
45
0
45
20
300
15
0
44
256
120
0
50
0
50
0
50
20
300
15
0
44
256
10
150
0
50
0
50
0
50
20
300
15
0
44
256
10
t
OEH
10
FIGURE 2 – AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
I
OL
Current Source
D.U.T.
C
EFF
= 50 pf
V
Z
1.5V
(Bipolar Supply)
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75 ½.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.ATE tester includes jig capacitance.
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 8
© 2012 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WF2M16-XXX5
PACKAGE 102 – 44 LEAD, CERAMIC SOJ**
28.70 (1.13) ± 0.25 (0.010)
0.2 (0.008)
± 0.05 (0.002)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
10.92 (0.430)
± 0.13 (0.005)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
1.27 (0.050) TYP
26.7 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
** Package to be developed.
PACKAGE 207 – 56 LEAD, CERAMIC SOP*
23.63 (0.930) ± 0.25 (0.010)
21.59 (0.850) TYP
0.18 (0.007)
± 0.05 (0.002)
3.43 (0.135)
MAX
0.51 (0.020)
± 0.13 (0.005)
16.13 (0.635)
± 0.13 (0.005)
12.96 (0.510)
± 0.15 (0.006)
1.60 (0.063) TYP
+
+
0.51 (0.020) TYP
PIN 1
IDENTIFIER
0.80 (0.031) TYP
0.25 (0.010)
± 0.05 (0.002)
SEE DETAIL "A"
4.06 (0.160)
MAX
R = 0.18 (0.007) TYP
0°/-4°
DETAIL "A"
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 8
© 2012 Microsemi Corporation. All rights reserved.
5
* Package Dimensions subject to change
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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