The UT54ACS153 and the UT54ACTS153 are dual four to one
line selectors/multiplexers. Common inputs A and B select a
value from one of four sources for each section and routes the
value from each section to their respective outputs. Separate
strobe inputs, G are provided for each of the two four-line sec-
tions.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
SELECT
INPUTS
B
X
L
L
L
L
H
H
H
H
A
X
L
L
H
H
L
L
H
H
C0
X
L
H
X
X
X
X
X
X
DATA INPUTS
C1
X
X
X
L
H
X
X
X
X
C2
X
X
X
X
X
L
H
X
X
C3
X
X
X
X
X
X
X
L
H
OUTPUT
CONTROL
G
H
L
L
L
L
L
L
L
L
OUTPUT
Y
L
L
H
L
H
L
H
L
H
PINOUTS
16-Pin DIP
Top View
1G
B
1C3
1C2
1C1
1C0
1Y
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
2G
A
2C3
2C2
2C1
2C0
2Y
16-Lead Flatpack
Top View
1G
B
1C3
1C2
1C1
1C0
1Y
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
2G
A
2C3
2C2
2C1
2C0
2Y
LOGIC SYMBOL
A
B
1G
1C0
1C1
1C2
1C3
(14)
(2)
(1)
(6)
(5)
(4)
(3)
EN
0
1
2
3
MUX
(7)
0
1
0
-
G
--
3
1Y
(15)
2G
(10)
2C0
(11)
2C1
(12)
2C2
(13)
2C3
(9)
2Y
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
1
LOGIC DIAGRAM
OUTPUT
CONTROL
1G
(1)
1C0 (6)
(5)
(7)
1C1
DATA 1
1C2
1Y
(4)
1C3
(3)
B
SELECT
(2)
A (14)
2C0
(10)
2C1 (11)
DATA 2
2C2
(12)
(9)
2Y
2C3
(13)
OUTPUT
CONTROL
2G
(15)
2
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
3
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
I
DDQ
C
IN
C
OUT
Quiescent Supply Current
Input capacitance
5
Output capacitance
5
V
DD
= 5.5V
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
10
15
15
μA
pF
pF
2.1
1.6
mW/
MHz
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
0.40
0.25
V
V
OH
V
I
OS
I
OL
mA
mA
4
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
主题：自备终端(BYOD)发展趋势;用员工自己的移动设备来控制对工作设施及设备的使用，会对信息安全产生怎样的影响;在不使公司有安全风险或不损害员工隐私的前提下，有哪些方式能安全地实现这样的设施及设备使用。 自备终端(Bring Your Own Device，简称BYOD)，即企业允许员工离职时保留自己的手机，这种做法正日益流行。如今智能手机功能也越来越多，我们不仅能用自己的手机访问电脑、网...[详细]
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
