Preliminary
Semiconductor
STK0290P
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
•
•
•
High Voltage: BV
DSS
=900V(Min.)
Low C
rss
: C
rss
=5.0F(Typ.)
Low gate charge : Qg=18.2nC(Typ.)
Low R
DS(on)
:R
DS(on)
=7.2Ω(Max.)
Ordering Information
Type NO.
STK0290P
Marking
STK0290
Package Code
TO-220AB-3L
Outline Dimensions
Φ3.70
Max.
9.80~10.20
unit :
mm
15.35~16.05
12.80~13.00
9.05~9.35
1.37 Max.
12.68~13.48
1.62 Max.
0.90 Max.
2.54 Typ.
2.54 Typ.
0.60 Max.
2.60 Max.
3.00 Typ.
4.35~4.65
PIN Connections
1. Gate
2. Drain
3. Source
Preliminary
1
Preliminary
STK0290P
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed)
*
(Tc=25°C)
Symbol
V
DSS
V
GSS
I
D
T
C
=25℃
T
C
=100℃
I
DM
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
900
±30
2.2
1.39
8.8
85
2.2
170
8.8
8.5
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
°C
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max
1.47
62.5
Unit
℃/W
Preliminary
2
Preliminary
STK0290P
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
(Tc=25°C)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250
㎂
, V
GS
=0V
I
D
=250
㎂
, V
GS
= V
DS
V
DS
=900V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=1.1A
V
DS
=50V, I
D
=1.1A
V
GS
=0V, V
DS
=25V
f=1 MHz
Min. Typ. Max.
900
3.0
-
-
-
-
-
-
-
-
-
-
-
5.6
2.0
560
50
5.0
15
35
20
30
18.2
3.8
6.0
-
5.0
10
±100
7.2
-
675
65
7.0
40
80
50
70
21.5
-
-
Unit
V
V
㎂
㎁
Ω
S
㎊
V
DD
=450V, I
D
=2.2A
R
G
=25Ω
-
-
③
④
V
DS
=720V, V
GS
=10V
I
D
=2.2A
-
-
-
㎱
③
④
-
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
(Tc=25°C)
Symbol
I
S
I
SP
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=2.2A
I
S
=2.2A, V
GS
=0V
dI
S
/dt=100A/
㎲
Min
-
-
-
-
-
Typ
-
-
-
400
1.6
Max
2.2
8.8
1.4
-
-
Unit
A
V
㎱
μC
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=65mH, I
AS
=2.2A, V
DD
=50V, R
G
=25Ω
③
Pulse Test : Pulse width≤ 300
㎲
, Duty cycle≤ 2%
④
Essentially independent of operating temperature
Preliminary
3
Preliminary
STK0290P
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
Preliminary
4
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