Semiconductor
STK0260D
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
•
•
•
High Voltage: BV
DSS
=600V(Min.)
Low C
rss
: C
rss
=6.0pF(Typ.)
Low gate charge : Qg=8.4nC(Typ.)
Low R
DS(on)
:R
DS(on)
=4.7Ω(Max.)
PIN Connection
D
D
G
Ordering Information
Type No.
STK0260D
Marking
STK0260
Package Code
TO-252
GDS
TO-252
S
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed)
*
(Tc=25°C)
Symbol
V
DSS
V
GSS
I
D
(Tc=25℃)
(Tc=125℃)
I
DP
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
600
±30
2.0
1.2
8.0
34
2.0
42
2.0
3.7
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Drain Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-a)
Typ.
-
-
Max
3.67
62.5
Unit
℃/W
KSD-T6O004-003
1
STK0260D
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
(Tc=25°C)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250μA, V
GS
=0
I
D
=250μA, V
DS
= V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=1.0A
V
DS
=10V, I
D
=1.0A
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
600
2.0
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.8
2.3
290
33
6.0
22
10.5
7
10.5
8.4
1.4
2.6
Max.
-
4.0
1
±100
4.7
-
435
49
9.0
-
-
-
-
12.6
2.1
3.9
Unit
V
V
μA
nA
Ω
S
pF
V
DD
=300V, V
GS
=10V
I
D
=2.0A, R
G
=25Ω
-
③
④
-
-
ns
V
DS
=300V, V
GS
=10V
I
D
=2.0A
-
-
nC
③
④
-
Source-Drain Diode Ratings and Characteristics
Characteristic
Continuous source current
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
(Tc=25°C)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=2.0A
I
s
=2.0A, V
GS
=0V
di
s
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
230
0.84
Max
2.0
8.0
1.4
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=9.5mH, I
AS
=2.0A, V
DD
=50V, R
G
=25Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T6O004-003
2
STK0260D
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
Fig. 2 I
D
- V
GS
:
-
Fig. 3 R
DS(on)
- I
D
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
=
KSD-T6O004-003
3
STK0260D
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
ㅋ
C
C
Fig. 9
I
D
- T
C
Fig. 10 Safe Operating Area
`
*
KSD-T6O004-003
4
STK0260D
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T6O004-003
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
