STK0250LM
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed)
*
(Ta=25°C)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
500
±30
0.64
2.4
1.3
0.6
4.0
0.6
0.1
150
-55~150
Unit
V
V
A
A
W
A
mJ
A
mJ
°C
Drain Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R
th(J-a)
Typ.
-
Max
96.2
Unit
℃/W
KSD-T0H019-000
2
STK0250LM
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
(Ta=25°C)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250μA, V
GS
=0
I
D
=250μA, V
DS
= V
GS
V
DS
=500V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=0.32A
V
DS
=10V, I
D
=0.32A
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
500
3.0
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.1
1.4
268
13
6.5
8.5
10.2
19
10.2
8.5
1.7
3.0
Max.
-
5.0
1
±100
3.4
-
402
19.5
9.8
-
-
-
-
12.8
2.6
4.5
Unit
V
V
μA
nA
Ω
S
pF
V
DD
=250V, V
GS
=10V
I
D
=0.64A, R
G
=25Ω
-
③
④
-
-
ns
V
DD
=250V, V
GS
=10V
I
D
=0.64A
-
-
nC
③
④
-
Source-Drain Diode Ratings and Characteristics
Characteristic
Continuous source current
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
(Ta=25°C)
Symbol
I
S
I
SP
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=0.32A
I
s
=0.64A, V
GS
=0V
di
s
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
200
0.7
Max
0.6
2.4
1.2
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=20mH, I
AS
=0.64A, V
DD
=50V, R
G
=25Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T0H019-000
3
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
