Semiconductor
STK0160
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
High Voltage: BV
DSS
=600V(Min.)
•
Low C
rss
: C
rss
=4pF(Typ.)
•
Low gate charge : Qg=12nC(Typ.)
•
Low R
DS(on)
: R
DS(on)
=9.0Ω(Typ.)
PIN Connection
D
G
Ordering Information
Type No.
STK0160
Marking
STK0160
Package Code
TO-92
GDS
TO-92
S
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
**
Drain current (Pulsed)
*
Total Power dissipation
**
(Ta=25°C)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
600
±30
0.3
1.2
625
0.3
53
0.3
1.1
150
-55~150
Unit
V
V
A
A
mW
A
mJ
A
mJ
°C
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R
th(J-a) **
Typ.
-
Max
200
Unit
℃/W
KSD-T0A010-004
1
STK0160
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
(Ta=25°C)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250μA, V
GS
=0
I
D
=250μA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=150mA
V
DS
=3V, I
D
=150mA
V
GS
=0V, V
DS
=25V,
f=1MHz
Min.
600
2.0
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
9.0
0.32
150
20
4.3
5.5
5
13
28
4.5
0.9
1.3
Max.
-
4.0
1
±100
13.5
-
-
-
-
-
-
-
-
6.7
1.3
1.9
Unit
V
V
μA
nA
Ω
S
pF
V
DD
=300V, I
D
=0.3A
R
G
=25Ω
③④
-
-
-
ns
V
DD
=300V, V
GS
=10V
I
D
=0.3A
③④
-
-
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current(Plused)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
(Ta=25°C)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=0.3A
I
s
=0.3A, V
GS
=0V
dI
S
/dt=80A/us
Min
-
-
-
-
-
Typ
-
-
0.7
260
3.5
Max
0.3
1.2
1.2
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=80.3mH, I
AS
=1.1A, V
DD
=50V, R
G
=25Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T0A010-004
2
STK0160
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
Fig. 2 I
D
- V
GS
:
-
Fig. 3 R
DS(on)
- I
D
Fig. 4 I
S
- V
SD
℃
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
KSD-T0A010-004
3
STK0160
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
ㅋ
C
C
Fig. 9 I
D
- T
a
Fig. 10 Safe Operating Area
`
*
KSD-T0A010-004
4
STK0160
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T0A010-004
5
嵌入式系统
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