MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9080/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large–signal, common–
source amplifier applications in 26 volt base station equipment.
•
Typical Performance for GSM Frequencies, 921 to 960 MHz,
26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Ease of Design for Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90
Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance
Parameters
MRF9080
MRF9080S
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N–CHANNEL
BROADBAND RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF9080)
CASE 465A–04, STYLE 1
(MRF9080S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC
=
25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
+15, – 0.5
250
1.43
– 65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Typical)
M1 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA
©
Motorola, Inc. 2000
RF DEVICE DATA
MRF9080 MRF9080S
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300
µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture) (2)
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Common–Source Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
P1dB
Gps
η1
η2
IRL
Ψ
68
17
47
—
9.5
75
18.5
52
55
12.5
—
20
—
—
—
W
dB
%
%
dB
Coss
Crss
—
—
73
2.9
—
—
pF
pF
VGS(th)
VGS(Q)
VDS(on)
gfs
2.0
—
—
—
—
3.7
0.19
8.0
4.0
—
0.4
—
Vdc
Vdc
Vdc
S
IDSS
IDSS
IGSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
No Degradation In Output Power
Before and After Test
(1) Part is internally input matched.
(2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency
MRF9080 MRF9080S
2
MOTOROLA RF DEVICE DATA
VGG
+
C6
U1
R1
C5
R2
VDD
+
C9
R3
P1
R4
T1
+
C4
C3
C15
R5
R6
C7
DUT
C10
C13
C14
RF
OUTPUT
RF
INPUT
C1
C2
C11
C8
C12
Figure 1. Broadband GSM 900 Optimized Demo Board Schematic
Table 1. Broadband GSM 900 Optimized Demo Board Component Designations and Values
Designators
C1
C2
C3, C15
C4, C6
C5
C7, C8
C9
C10, C11
C12, C13
C14
P1
R1
R2
R3
R4
R5, R6
T1
U1
Description
4.7 pF Chip Capacitor, ACCU–P (0805) AVX #08051J3R9CBT
3.9 pF Chip Capacitor, ACCU–P (0805) AVX #08051J3R9CBT
22 pF Chip Capacitors, ACCU–P (0805) AVX #08051J221
22
m
F, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
1.0
m
F Chip Capacitor, ACCU–P (0805) AVX #08053G105ZATEA
5.6 pF Chip Capacitors, ACCU–P (0805) AVX #08051J5R18CBT
220
m
F, 63 V Electrolytic Capacitor
3.3 pF Chip Capacitors, ACCU–P (0805) AVX #08051J8R2CBT
2.2 pF Chip Capacitors, ACCU–P (0805) AVX #08051J2R2CBT
4.7 pF Chip Capacitor, ATC #100B
5.0 kΩ Potentiometer CMS Cermet Multi–turn, Bourns #3224W
10
Ω,
1/8 W Chip Resistor (0805)
1.0 kΩ, 1/8 W Chip Resistor (0805)
1.2 kΩ, 1/8 W Chip Resistor (0805)
2.2 kΩ, 1/8 W Chip Resistor (0805)
1.0 kΩ, 1/8 W Chip Resistor (0805)
Bipolar NPN Transistor, SOT–23, ON Semiconductor #BC847ALT1
Voltage Regulator, Micro–8, ON Semiconductor #LP2951ACDM–5.0R2
RF Connectors, Type SMA, Radial #R125510001
Substrate = Taconic RF35, Thickness 0.5mm
MOTOROLA RF DEVICE DATA
MRF9080 MRF9080S
3
VBIAS
Ground
VSUPPLY
C5 R1
R2
R4
T1
R3
U1
P1
C6
C9
C15
C4
R5
C3
C1
C2
C11
C8
C12
C14
R6
C7
C10
C13
MRF9080
Figure 2. Broadband GSM 900 Optimized Demo Board Component Layout
MRF9080 MRF9080S
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
(IN MOTOROLA BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
21
IDQ = 1000 mA
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
20
800 mA
600 mA
19
400 mA
18
VDD = 26 Vdc
f = 940 MHz
T = 25°C
1
10
Pout, OUTPUT POWER (WATTS)
100
26 Vdc
19
VDD = 22 Vdc
20
30 Vdc
18
IDQ = 600 mA
f = 940 MHz
T = 25°C
17
1
10
Pout, OUTPUT POWER (WATTS)
100
17
Figure 3. Power Gain versus Output Power
Figure 4. Power Gain versus Output Power
21
20
G ps , POWER GAIN (dB)
19
18
17
70 W
16
15
850
VDD = 26 Vdc
IDQ = 600 mA
T = 25°C
870
890
910
930 950 970
f, FREQUENCY (MHz)
Gps
Pout = 20 W
70 W
IRL
Pout = 20 W
0
–5
–10
–15
–20
–25
–30
990 1010 1030 1050
120
110
IRL, INPUT RETURN LOSS (dB)
P out , OUTPUT POWER (WATTS)
100
90
80
70
60
50
40
30
20
10
0
Pout
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
T = 25°C
0
0.2
0.4
1
1.2
0.6
0.8
1.4
Pin, INPUT POWER (WATTS)
1.6
60
50
h
40
30
20
10
0
1.8
Figure 5. Power Gain and Input Return Loss
versus Frequency
Figure 6. Output Power and Efficiency versus
Input Power
20
25°C
G ps , POWER GAIN (dB)
19
50°C
85°C
18
110
100
P out , OUTPUT POWER (WATTS)
90
80
70
60
50
40
30
20
10
100
0
0
0.2
0.4
0.6
0.8
1
1.2
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
1.4
1.6
Pout
25°C
85°C
25°C
85°C
55
50
45
40
35
30
25
20
15
10
5
0
1.8
17
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
1
10
Pout, OUTPUT POWER (WATTS)
16
Pin, INPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
Figure 8. Output Power and Efficiency versus Input
Power
MRF9080 MRF9080S
5
MOTOROLA RF DEVICE DATA
h
, DRAIN EFFICIENCY (%)
h
h
, DRAIN EFFICIENCY (%)
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