MURS360B
Ultrafast power diode
Rev.03 - 30 December 2019
Product data sheet
1. General description
Ultrafast power diode in a SMB surface-mountable plastic package.
2. Features and benefits
•
•
•
•
•
Low on-state loss
Low leakage current
Low thermal resistance
Surface-mountable package
Reduces switching losses in associated MOSFET or IGBT
3. Applications
•
•
•
Buck and Boost converter
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
Inverter freewheeling and protection diode
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
average forward current
δ = 0.5 ; square-wave pulse; T
lead
≤ 105 °C;
Fig. 1;
Fig. 2; Fig. 3
repetitive peak forward
current
non-repetitive peak
forward current
Parameter
forward voltage
δ = 0.5 ; t
p
= 25 μs; T
lead
≤ 105 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
Symbol
V
F
Conditions
I
F
= 3 A; T
j
= 25 °C;
Fig. 6
I
F
= 3 A; T
j
= 150 °C;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/μs;
T
j
= 25 °C;
Fig. 7
-
50
-
ns
Min
-
-
Static characteristics
-
0.88
1.3
1.05
V
V
Conditions
Values
600
3
6
100
110
Typ
Max
Unit
V
A
A
A
A
Unit
Absolute maximum rating
WeEn Semiconductors
Ultrafast power diode
MURS360B
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
K
A
cathode
anode
1
2
Simplified outline
Graphic symbol
K
A
001aaa020
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Packing
Name
method
MURS360B
SMB
MURS360BJ
Reel
Small packing Package
quantity
version
3000
SMB
Package
issue date
20-Feb-2017
7. Marking
Table 4. Marking codes
Type number
MURS360B
Marking codes
360B
MURS360B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
30 December 2019
2 / 10
WeEn Semiconductors
Ultrafast power diode
MURS360B
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
axc18-001
Conditions
Values
600
600
Unit
V
V
V
A
A
A
A
°C
°C
axc18-002
DC
δ = 0.5 ; square-wave pulse; T
lead
≤ 105 °C;
Fig. 1;
Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 μs; T
lead
≤ 105 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
600
3
6
100
110
-65 to 175
175
T
stg
T
j
P
tot
(W)
5
δ=1
P
tot
(W)
4
a = 1.57
3
2.8
2
4.0
1.9
2.2
4
0.5
3
0.1
2
0.2
1
1
0
0
1
2
3
4
5
I
F(AV)
(A)
0
0
1
2
3
I
F(AV)
(A)
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.803 V; R
s
= 0.0647 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.803 V; R
s
= 0.0647 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
MURS360B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
30 December 2019
3 / 10
WeEn Semiconductors
Ultrafast power diode
MURS360B
I
FSM
(A)
10
4
I
F
axc18-004
I
FSM
t
10
3
t
p
T
j(init)
= 25 °C max
10
2
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3. Forward current as a function of lead
temperature; typical values
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
MURS360B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
30 December 2019
4 / 10
WeEn Semiconductors
Ultrafast power diode
MURS360B
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-lead)
Parameter
thermal resistance
from junction to
lead
thermal resistance
from junction to
ambient free air
Conditions
mounted on a minimum footprint
printed-circuit board (FR4);
Fig. 5
mounted on a minimum footprint
printed-circuit board (FR4)
Min
-
Typ
23
Max
25
Unit
K/W
R
th(j-a)
-
75
-
K/W
Z
th(j-l)
(K/W)
10
2
axc18-005
10
1
10
-1
P
δ=
t
p
T
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
T
t
p
(s)
10
Fig. 5. Transient thermal impedance from junction to lead as a function of pulse duration
MURS360B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
30 December 2019
5 / 10
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