Data Sheet No. PD65005
IR2108(4)C
HALF-BRIDGE DRIVER DIE IN WAFER FORM
Features
•
100 % Tested at Probe
!
•
Available in Chip Pack, Unsawn Wafer, Sawn on
•
•
•
Film
"
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
•
•
•
•
•
•
•
•
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with HIN input
Low side output out of phase with
LIN
input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and programmable up
to 5us with one external R
DT
resistor (IR21084)
Lower di/dt gate driver for better noise immunity
Typical Connection
IR2108
V
CC
up to 600V
V
CC
HIN
LIN
V
B
HO
V
S
LO
up to 600V
TO
LOAD
HIN
LIN
COM
IR21084
HO
(Refer to Die Outlines for correct pin
configuration). This/These diagram(s)
show electrical connections only. Please
refer to our Application Notes and
Design Tips for proper circuit board lay-
out.
V
CC
HIN
LIN
V
CC
HIN
LIN
DT
V
B
V
S
TO
LOAD
V
SS
R
DT
V
SS
COM
LO
Note:
!
This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized
processes. Due to restrictions in die level processing, die may not be equivalent to standard package products and are
therefore offered with a conditional performance guarantee.The above data sheet is based on IR sample testing under
certain predetermined and assumed conditions, and are provided for illustration purposes only. Customers are encouraged
to perform testing in actual proposed packaged and use conditions. IR die products are tested using IR-based quality
assurance procedures and are manufactured using IR’s established processes. Programs for customer-specified testing
are available upon request. IR has experienced assembly yields of generally 95% or greater for individual die; however,
customer’s results will vary. Estimates such as those described and set forth in this data sheet for semiconductor die will
vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent
basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable
standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale,
which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be
carried out or product can be purchased as known good die.
"
Part number shown is for die in wafer. Contact factory for these other options.
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1
IR2108(4)C
Description
The IR2108(4)C are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side
referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono-
lithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The
output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The float-
ing channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 volts.
2106/2301//2108//2109/2302/2304 Feature Comparison
Part
2106/2301
21064
2108
21084
2109/2302
21094
2304
Input
logic
HIN/LIN
HIN/LIN
IN/SD
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
yes
yes
Dead-Time
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
COM
none
Internal 540ns
Programmable 0.54~5
µs
Internal 540ns
Programmable 0.54~5
µs
Internal 100ns
2
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IR2108
(4)C
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
DT
V
IN
V
SS
dV
S
/dt
T
J
T
S
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Programmable dead-time pin voltage (IR21084 only)
Logic input voltage (HIN &
LIN
)
Logic ground (IR21084 only)
Allowable offset supply voltage transient
Junction temperature
Storage temperature
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
V
SS
- 0.3
V
SS
- 0.3
V
CC
- 25
—
—
-50
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
150
150
Units
V
V/ns
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15V differential.
Symbol
VB
V
S
V
HO
V
CC
V
LO
V
IN
DT
V
SS
T
A
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
IR2108
Min.
V
S
+ 10
Note 1
V
S
10
0
COM
IR21084
V
SS
-5
-40
Max.
V
S
+ 20
600
V
B
20
V
CC
V
CC
V
SS
V
CC
5
125
Units
V
V
CC
Programmable dead-time pin voltage (IR21084 only)
Logic ground (IR21084 only)
Ambient temperature
°C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
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3
IR2108(4)C
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: HIN and LIN. The V
O
, I
O
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Definition
Logic “1” input voltage for HIN & logic “0” for
LIN
Logic “0” input voltage for HIN & logic “1” for
LIN
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
V
CC
and V
BS
supply undervoltage positive going
threshold
V
CC
and V
BS
supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed current
Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.9
—
—
—
—
20
0.4
—
—
8.0
7.4
0.3
120
250
—
—
0.8
0.3
—
75
1.0
5
—
8.9
8.2
0.7
200
350
—
0.8
1.4
0.6
50
130
1.6
20
2
9.8
9.0
V
—
—
—
mA
V
O
= 0V,
PW
≤
10
µs
V
O
= 15V,
PW
≤
10
µs
µA
µA
mA
V
V
CC
= 10V to 20V
V
CC
= 10V to 20V
I
O
= 20 mA
I
O
= 20 mA
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 0V or 5V
RDT=0
HIN = 5V,
LIN
= 0V
HIN = 0V,
LIN
= 5V
4
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IR2108
(4)C
Functional Block Diagram
VB
2108
HV
LEVEL
SHIFTER
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
HIN
VSS/COM
LEVEL
SHIFT
VS
PULSE
GENERATOR
DT
DEADTIME &
SHOOT-THROUGH
PREVENTION
UV
DETECT
VCC
+5V
LO
LIN
VSS/COM
LEVEL
SHIFT
DELAY
COM
VSS
VB
21084
HIN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
PULSE
FILTER
UV
DETECT
R
R
S
Q
HO
VS
DT
+5V
DEADTIME &
SHOOT-THROUGH
PREVENTION
UV
DETECT
VCC
LO
LIN
VSS/COM
LEVEL
SHIFT
DELAY
COM
VSS
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