Data Sheet No. PD65000
IR2136C/IR21362C/IR21363C/IR21365C/
IR21366C/IR21367C/IR21368C
3-PHASE BRIDGE DRIVER DIE IN WAFER FORM
Features
•
100 % Tested at Probe
•
Available in Chip Pack, Unsawn Wafer, Sawn on Film
•
Floating channel designed for bootstrap operation
•
•
•
•
•
•
•
•
•
•
Fully operational to +600V
Tolerant to negative transient voltage - dV/dt immune
Gate drive supply range from 10 to 20V (IR2136C/IR21368C), 11.5 to 20V (IR21362C) or 12 to 20V
(IR21363C/IR21365C/IR21366C/IR21367C)
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
Cross-conduction prevention logic
Lowside outputs out of phase with inputs. High side outputs out of phase (IR2136C/IR21363C/IR21365C/
IR21366C/IR21367C/IR21368C) or in phase (IR21362C) with inputs.
3.3V logic compatible
Lower di/dt gate driver for better noise immunity
Externally programmable delay for automatic fault clear
up to 600V
VCC
HIN1,2,3 / HIN1,2,3
LIN1,2,3
HO1,2,3
FAULT
FAULT
EN
VS1,2,3
TO
LOAD
LO1,2,3
COM
VB1,2,3
Typical Connection
VCC
HIN1,2,3 / HIN1,2,3
LIN1,2,3
(Refer to the Die Outlines
for correct pin configura-
tion).
This/These
diagram(s) show electri-
cal connections only.
Please refer to our Appli-
cation
Notes
and
DesignTips for proper cir-
cuit board layout.
EN
RCIN
ITRIP
VSS
IR2136(2)(3)(5)(6)(7)(8)
GND
Note:
This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized
processes. Due to restrictions in die level processing, die may not be equivalent to standard package products and are
therefore offered with a conditional performance guarantee. The above data sheet is based on IR sample testing under
certain predetermined and assumed conditions, and are provided for illustration purposes only. Customers are encouraged
to perform testing in actual proposed packaged and use conditions. IR die products are tested using IR-based quality
assurance procedures and are manufactured using IR’s established processes. Programs for customer-specified testing
are available upon request. IR has experienced assembly yields of generally 95% or greater for individual die; however,
customer’s results will vary. Estimates such as those described and set forth in this data sheet for semiconductor die will
vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent
basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable
standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale,
which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be
carried out or product can be purchased as known good die.
Part number shown is for die in wafer. Contact factory for these other options.
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1
IR2136(2)(3)(5)(6)(7)(8)C
Description
The IR2136C/IR21362C/IR21363C/IR21365C/IR21366C/IR21367C/IR21368C are high votage, high speed power
MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase
applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com-
patible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six
outputs can be derived from an external current sense resistor. An enable function is available to terminate all six
outputs simultaneously. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage
shutdown has occurred. Overcurrent fault conditions are cleared automatically after a delay programmed exter-
nally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high fre-
quency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high
side configuration which operates up to 600 volts.
Feature Comparison:
IR2136C/IR21362C/IR21363C/IR21365C/IR21366C/IR21367C/IR21368C
Part
Input Logic
Ton (typ.)
Toff (typ.)
V
IH
(typ.)
V
IL
(typ.)
Vitrip+
UV CC/BS+
UV CC/BS-
IR2136
HIN, LIN
400ns
380ns
2.7V
1.7V
0.46V
8.9V
8.2V
IR21362
HIN/LIN
400ns
380ns
2.7V
1.7V
0.46V
10.4V
9.4V
IR21363
HIN, LIN
400ns
380ns
2.7V
1.7V
0.46V
11.2V
11.0V
IR21365
HIN, LIN
400ns
380ns
2.7V
1.7V
4.3V
11.2V
11.0V
IR21366
HIN, LIN
250ns
180ns
2.0V
1.3V
0.46V
11.2V
11.0V
IR21367
HIN, LIN
250ns
180ns
2.0V
1.3V
4.3V
11.2V
11.0V
IR21368
HIN,LIN
400ns
380ns
2.0V
1.3V
4.3V
8.9V
8.2V
2
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IR2136(2)(3)(5)(6)(7)(8)C
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
Symbol
V
S
V
BS
V
HO
V
CC
V
SS
V
LO1,2,3
V
IN
Definition
High side offset voltage
High side floating supply voltage
High side floating output voltage
Low side and logic fixed supply voltage
Logic ground
Low side output voltage
Input voltage LIN,HIN,ITRIP, EN, RCIN
Min.
V
B1,2,3
- 25
-0.3
V
S1,2,3
- 0.3
-0.3
V
CC
- 25
-0.3
V
SS
- 0.3
Max.
V
B1,2,3
+ 0.3
625
V
B1,2,3
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
lower of
(V
SS
+ 15) or
V
CC
+ 0.3)
V
CC
+ 0.3
50
150
150
Units
V
V
FLT
dV/dt
T
J
T
S
FAULT output voltage
Allowable offset voltage slew rate
Junction temperature
Storage temperature
V
SS
- 0.3
—
—
-55
V/ns
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recom-
mended conditions. All voltage parameters are absolute referenced to COM. The VS offset rating is tested with all supplies
biased at 15V differential.
Symbol
V
B1,2,3
Definition
High side floating supply voltage
IR2136(8)
IR21362
IR2136(3)(5)(6)(7)
Min.
Max.
Units
V
S1,2,3
V
HO1,2,3
V
LO1,2,3
V
CC
High side floating supply offset voltage
High side output voltage
Low side output voltage
Low side and logic fixed supply voltage
IR2136(8)
IR21362
IR2136(3)(5)(6)(7)
V
SS
V
FLT
V
RCIN
Logic ground
FAULT output voltage
RCIN input voltage
V
S1,2,3 +
10 V
S1,2,3 +
20
V
S1,2,3 +
11.5 V
S1,2,3 +
20
V
S1,2,3 +
12 V
S1,2,3 +
20
Note 1
600
V
S1,2,3
V
B1,2,3
0
V
CC
10
20
11.5
20
12
20
-5
5
V
SS
V
CC
V
SS
V
CC
V
Note 1: Logic operational for V
S
of COM -5V to COM +600V. Logic state held for V
S
of COM -5V to COM -V
BS
.
(Please refer to the Design Tip DT97-3 for more details).
Note 2: All input pins (HIN-, HIN, LIN-, EN and ITRIP) are internally clamped with a 5.2V zener diode.
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3
IR2136(2)(3)(5)(6)(7)(8)C
Recommended Operating Conditions cont.
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recom-
mended conditions. All voltage parameters are absolute referenced to COM. The VS offset rating is tested with all supplies
biased at 15V differential.
Symbol
V
ITRIP
V
IN
T
A
Definition
ITRIP input voltage
Logic input voltage
LIN
, HIN (IR2136,IR21363(5)(6)(7)(8)),
HIN(IR21362), EN
Ambient temperature
Min.
V
SS
V
SS
-40
Max.
V
SS
+5
V
SS
+5
125
Units
V
o
C
Note 2: All input pins (HIN-, HIN, LIN-, EN and ITRIP) are internally clamped with a 5.2V zener diode.
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
1,2,3) = 15V unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to V
SS
and
are applicable to all six channels (H
S
1,2,3 and L
S
1,2,3). The V
O
and I
O
parameters are referenced to COM and V
S
1,2,3
and are applicable to the respective output leads: H
O1,2,3
and L
O1,2,3.
Symbol
V
IH
Definition
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IR2136(3)(5)
Logic “1” input voltage HIN1,2,3
IR21362
Logic “0” input voltage LIN1,2,3, HIN1,2,3
Min. Typ. Max. Units Test Conditions
3.0
—
—
V
IL
IR21366(7)(8)
Logic “1” input voltage LIN1,2,3, HIN1,2,3
Logic “0” input voltage HIN1,2,3
IR2136(3)(5)
IR21362
IR21366(7)(8)
2.5
—
—
—
—
0.8
Logic “0” input voltage LIN1,2,3, HIN1,2,3
V
EN,TH+
V
EN,TH-
V
IT,TH+
EN positive going threshold
EN negative going threshold
ITRIP positive going threshold
IR2136(2)(3)(6)
IR21365(7)(8)
V
IT,HYS
ITRIP input hysteresis
IR2136(2)(3)(6)
IR21365(7)(8)
V
RCIN,TH+
V
RCIN,HYS
V
OH
V
OL
V
CCUV+
V
BSUV+
RCIN positive going threshold
RCIN input hysteresis
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
V
CC
and V
BS
supply undervoltage
positive going threshold
IR2136(8)
IR21362
IR21363(5)(6)(7)
—
—
—
—
—
—
8.0
9.6
10.6
0.07
.15
8
3
0.9
0.4
8.9
10.4
11.1
—
—
—
—
1.4
0.6
9.8
11.2
11.6
I
O
= 20 mA
I
O
= 20 mA
—
—
0.8
0.37
3.85
—
—
—
0.46
4.30
0.8
3
—
0.55
4.75
V
4
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IR2136(2)(3)(5)(6)(7)(8)C
Static Electrical Characteristics cont.
V
BIAS
(V
CC
, V
BS
1,2,3) = 15V unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to V
SS
and
are applicable to all six channels (H
S
1,2,3 and L
S
1,2,3). The V
O
and I
O
parameters are referenced to COM and V
S
1,2,3
and are applicable to the respective output leads: H
O1,2,3
and L
O1,2,3.
Symbol
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
LK
I
QBS
I
QCC
V
IN, CLAMP
I
LIN+
I
LIN-
I
HIN+
Definition
V
CC
and V
BS
supply undervoltage
negative going threshold
V
CC
and V
BS
supply undervoltage
lockout hysteresis
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Input clamp voltage (HIN, LIN, ITRIP and EN)
Min. Typ. Max. Units Test Conditions
IR2136(8)
IR21362
IR21363(5)(6)(7)
IR2136
IR21362
IR21363(5)
7.4
8.6
10.4
0.3
0.5
—
—
—
—
4.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
120
250
—
—
8.2
9.4
10.9
0.7
1.0
0.2
—
70
1.6
5.2
200
0
100
0
200
30
0
100
0
30
0
30
0
0
200
350
50
50
9.0
10.2
11.4
—
—
—
50
120
2.3
5.5
300
1
220
1
300
100
1
220
1
100
1
100
1
1
—
—
100
100
mA
V
ITRIP
= 5V
V
ITRIP
= 0V
V
ENABLE
= 5V
V
ENABLE
= 0V
V
RCIN
= 0V or 15V
V
O
=0V, PW
≤
10 µs
V
O
=15V, PW
≤10
µs
µA
V
HIN
= 0V
V
HIN
= 5V
V
LIN
= 0V
V
µA
mA
V
V
B1,2,3
=V
S1,2,3
=600V
V
IN
= 0V or 5V
I
IN
=100µA
V
LIN
= 5V
Input bias current (LOUT = HI)
Input bias current (LOUT = LO)
Input bias current (HOUT = HI)
IR2136(2)(3)(5)
IR21366(7)(8)
IR2136(2)(3)(5)
IR21366(7)(8)
IR2136(3)(5)
IR21362
IR21366(7)(8)
IR2136(3)(5)
IR21362(6)(7)(8)
I
HIN-
I
ITRIP+
I
ITRIP-
I
EN+
I
EN-
I
RCIN
I
O+
I
O-
R
ON,RCIN
R
ON,FLT
Input bias current (HOUT = LO)
“high” ITRIP input bias current
“low” ITRIP input bias current
“high” ENABLE input bias current
“low” ENABLE input bias current
RCIN input bias current
Output high short circuit pulsed current
Output low short circuit pulsed current
RCIN low on resistance
FAULT low on resistance
Ω
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