MICRONAS
HAL114, HAL115
Hall Effect Sensor Family
Edition Dec. 20, 1999
6251-456-2DS
MICRONAS
HAL11x
Contents
Page
3
3
3
3
4
4
4
4
5
5
5
5
6
6
7
8
10
10
12
14
14
14
14
14
16
Section
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
2.
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
4.
4.1.
4.2.
5.
5.1.
5.2.
5.3.
5.4.
6.
Title
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability
Functional Description
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Characteristics
Magnetic Characteristics
Type Descriptions
HAL114
HAL115
Application Notes
Application Circuit
Ambient Temperature
Extended Operating Conditions
Start-up Behavior
Data Sheet History
2
Micronas
HAL11x
Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 11x family consists of different Hall switches
produced in CMOS technology.
All sensors include a temperature-compensated Hall
plate, a comparator, and an open-drain output transistor.
The comparator compares the actual magnetic flux
through the Hall plate (Hall voltage) with the fixed refer-
ence values (switching points). Accordingly, the output
transistor is switched on or off. The sensors of this family
differ in the switching behavior.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
4.5 V to 24 V in the ambient temperature range from
–40
°C
up to 125
°C.
All sensors are available in an SMD-package (SOT-89B)
and in a leaded version (TO-92UA).
1.1. Features
1.3. Marking Code
– operates from 4.5 V to 24 V supply voltage
– overvoltage protection
– reverse-voltage protection at V
DD
-pin
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic mag-
netic fields up to 20 kHz
– stable switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag-
netic characteristics
HAL114
HAL115
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
K
114K
115K
Temperature Range
E
114E
115E
C
114C
115C
1.2. Family Overview
The types differ according to the mode of switching.
Type
HAL114
HAL115
Switching Behavior
unipolar
bipolar
see Page
10
12
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
Unipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
Micronas
3
HAL11x
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature T
J
).
K:
T
J
= –40
°C
to +140
°C
E:
T
J
= –40
°C
to +100
°C
C:
T
J
= 0
°C
to +100
°C
The relationship between ambient temperature (T
A
) and
junction temperature is explained in section 5.2. on page
14.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K, E, or C
Package: SF for SOT-89B
UA for TO-92UA
(SO for SOT-89A)
Type: 11x
Example:
HAL114UA-E
→
Type: 114
→
Package: TO-92UA
→
Temperature Range: T
J
= –40
°C
to +100
°C
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260
°C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40
°C
and 90% relative humidity.
V
DD
1
OUT
V
DD
1
Reverse
Voltage &
Overvoltage
Protection
2. Functional Description
The HAL 11x sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Shunt protection devices clamp voltage peaks at the
Output-pin and V
DD
-pin together with external series
resistors. Reverse current is limited at the V
DD
-pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the V
DD
-pin for reverse
voltages ranging from 0 V to –15 V.
HAL11x
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit &
Overvoltage
Protection
Hall Plate
Comparator
Output
OUT
3
GND
2
Fig. 2–1:
HAL11x block diagram
3
2
GND
Fig. 1–1:
Pin configuration
4
Micronas
HAL11x
3. Specifications
3.1. Outline Dimensions
4.55
±0.1
x1
0.125
0.7
1.7
0.48
2
y
0.55
4
±0.2
min.
0.25
1
0.4
0.4
1.5
(2.54)
3.0
branded side
branded side
45°
SPGS7002-7-A/2E
1.5
±0.05
0.3
4.06
±0.1
sensitive area
x1
x2
y
3.05
±0.1
x2
sensitive area
3.1
±0.2
1
2
3
0.75
±0.2
0.42
1.27 1.27
14.0
min.
0.8
2.6
±0.1
top view
2
3
0.4
0.36
1.53
±0.05
0.06
±0.04
SPGS7001-7-A3/2E
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
Note:
The SOT-89A package will be discontinued in
2000 and be replaced by the SOT-89B package.
Fig. 3–3:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
Note:
For all package diagrams, a mechanical tolerance
of
±50 µm
applies to all dimensions where no tolerance
is explicitly given.
4.55
±0.1
x1
0.125
0.3
1.7
2
y
x2
sensitive area
3.2. Dimensions of Sensitive Area
0.4 mm x 0.2 mm
3.3. Positions of Sensitive Areas
4
±0.2
min.
0.25
1
0.4
0.4
1.5
3.0
2
3
0.4
2.55
±0.1
top view
SOT-89A
SOT-89B
|x
2
– x
1
| / 2 < 0.2 mm
TO-92UA
1.15
±0.05
y = 0.98 mm
±
0.2 mm
y = 0.95 mm
±
0.2 mm
y = 1.0 mm
±
0.2 mm
branded side
0.06
±0.04
SPGS0022-3-A3/2E
Fig. 3–2:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
Micronas
5
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