CY7C1383BV25
CY7C1381BV25
512K x 36 / 1M x 18 Flow-Thru SRAM
Features
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Fast access times: 7.5, 8.5, 10 ns
Fast clock speed: 117, 100, 83 MHz
Provide high-performance 2-1-1-1 access rate
Optimal for depth expansion
2.5V ± 5% power supply
Common data inputs and data outputs
Byte Write Enable and Global Write control
Chip enable for address pipeline
Address, data, and control registers
Internally self-timed Write Cycle
Burst control pins (interleaved or linear burst
sequence)
• Automatic power-down available using ZZ mode or CE
deselect
• High-density, high-speed packages
• JTAG boundary scan for BGA packaging version
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), Burst Control
Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb,
BWc, BWd,and BWe), and Global Write (GW).
Asynchronous inputs include the output enable (OE) and burst
mode control (MODE). The data outputs (Q), enabled by OE,
are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate self-timed WRITE cycle. WRITE cycles can be one
to four bytes wide as controlled by the write control inputs.
Individual byte write allows individual byte to be written. BWa
controls DQ1–DQ8 and DP1. BWb controls DQ9–DQ16 and
DP2. BWc controls DQ17–DQ24and DP3. BWd controls
DQ25–DQ32 and DP4. BWa, BWb BWc, and BWd can be
active only with BWe being LOW. GW being LOW causes all
bytes to be written. WRITE pass-through capability allows
written data available at the output for the immediately next
Read cycle. This device also incorporates pipelined enable
circuit for easy depth expansion without penalizing system
performance.
All inputs and outputs of the CY7C1381BV25 and the
CY7C1383BV25 are JEDEC standard JESD8-5-compatible.
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low power CMOS designs using advanced single
layer polysilicon, three-layer metal technology. Each memory
cell consists of six transistors.
The CY7C1381BV25 and CY7C1383BV25 SRAMs integrate
524,288 × 36 and 1,048,576 × 18 SRAM cells with advanced
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
117 MHz
7.5
210
30
100 MHz
8.5
190
30
83 Mhz
10
160
30
Unit
ns
mA
mA
Commercial
Cypress Semiconductor Corporation
Document #: 38-05249 Rev. *A
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3901 North First Street
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San Jose
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CA 95134 • 408-943-2600
Revised January 18, 2003
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