MCC
Description
•
•
•
•
•
omponents
20736 Marilla
Street Chatsworth
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MMBR901
High Current-Gain – Bandwidth Products
Low Noise Figure @ f=1.0GHz – NF
(matched)
=1.9dB (Typ)
High Power Gain – G
pe(matched)
=12.0dB (Typ) @ f=1.0GHz
Operating & Storage Temperature: -55°C to +150°C
Marking Code: 7A
NPN Silicon
High-Frequency
Transistor
Unit
Vdc
Vdc
Vdc
mAdc
o
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Thermal Resistance, Junction to Case
Power Dissipation @ TC=75 C (1)
Derate above 75
o
C
o
Symbol
V
CEO
V
CBO
V
EBO
I
C
R
q
JC
Value
15
25
2.0
30
250
0.300
4.0
A
D
C
B
C/W
P
D(max)
Watt
mW/
o
C
G
F
E
Electrical Characteristics @ 25
o
C Unless Otherwise Noted
Characteristics
Symbol
Min
Max
Unit
H
J
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
= 1.0mAdc, I
B
= 0)
Collector-Base Breakdow n Voltage
(I
C
= 0.1mAdc, I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
= 0.1mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 15 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
15
25
2.0
50
Vdc
Vdc
Vdc
NAdc
DIM
A
B
C
D
E
F
G
H
J
K
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 5.0 Vdc)
h
FE
50
200
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
=10Vdc, I
C
= 5.0 mAdc, f = 1.0 GHz)
Common-Emitter Amplifier Gain
(V
CC
=6.0Vdc, I
C
= 5.0 mAdc, f = 1.0 GHz)
Cobo
Gpe
12
1.0
pF
dB
Note:
1. Case temperature measured on collector lead
immediately adjacent to body of package
.037
.950
.037
.950
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Revision: 2
2003/04/30
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