UNISONIC TECHNOLOGIES CO., LTD
MMBT1815
AUDIO FREQUENCY
AMPLIFIER HIGH
FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BV
CEO
=-50V
*Collector current up to 150mA
*High Hfe linearity
*Complement to MMBT1015
NPN EPITAXIAL SILICON TRANSISTOR
3
1
2
SOT-23
*Pb-free plating product number: MMBT1815L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
EMITTER
2
BASE
3
COLLECTOR
ORDERING INFORMATION
Order Number
Normal
MMBT1815-AE3-R
Lead Free Plating
MMBT1815L-AE3-R
Package
SOT-23
Packing
Tape & Reel
MARKING
C4
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., LTD
1
QW-R206-014.D
MMBT1815
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation (Ta=25°C)
Collector current
Base current
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( Ta=25°C , unless otherwise specified )
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
I
B
RATINGS
60
50
5
250
150
50
UNIT
V
V
V
mW
mA
mA
Junction Temperature
T
J
150
℃
Operating Temperature
T
OPR
0 ~ +70
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range
and assured by design from –20℃~+85℃.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
C
OB
NF
TEST CONDITIONS
V
CB
= 60V, I
E
= 0
V
EB
= 5V, c = 0
V
CE
= 6V, Ic = 2mA
V
CE
= 6V, Ic = 150mA
Ic = 100mA, I
B
= 10mA
Ic = 100mA, I
B
= 10mA
V
CE
= 10V,Ic = 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Ic = -0.1mA, V
CE
= 6V
R
G
= 10kΩ, f = 100Hz
MIN
TYP
MAX UNIT
100
nA
100
nA
700
0.25
1.0
3.0
1.0
V
V
MHz
pF
dB
120
25
0.1
80
2.0
1.0
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-014.D
MMBT1815
TYPICAL CHARACTERISTICS
Fig.1 Static Characteristics
100
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 DC Current Gain
3
10
Ic,Collector Current (mA)
80
I
B
=300
µA
60
H
FE
, DC Current Gain
V
CE
=6V
2
10
I
B
=250
µA
40
I
B
=200
µA
I
B
=150
µA
1
10
20
I
B
=100
µA
I
B
=50
µA
0
0
4
8
12
16
20
0
10
-1
10
0
10
1
10
10
2
3
10
Collector-Emitter Voltage ( V)
Ic,Collector Current (mA)
Fig.3 Base-Emitter On Voltage
2
10
4
10
Fig.4 Saturation Voltage
Saturation Voltage (mV)
Ic,Collector Current (mA)
Ic=10*I
B
1
10
V
CE
=6V
3
10
V
BE
(SAT)
0
10
2
10
V
CE
(SAT)
-1
10
0
0.2
0.4
0.6
0.8
1.0
1
10
-1
10
0
10
1
10
2
10
3
10
Base-Emitter Voltage (V)
Ic,Collector Current (mA)
Fig.5 Current Gain-Bandwidth
Product
3
10
10
2
Fig.6 Collector Output
Capacitance
Cob,Capacitance (pF)
Current Gain-bandwidth
product,f
T
(MHz)
V
CE
=6V
2
10
10
1
f=1MHz
I
E
=0
1
10
10
0
0
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
10
Ic,Collector Current (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-014.D
MMBT1815
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-014.D
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