UTCMMBT1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BV
CEO
=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to MBT1015
2
1
3
MARKING
C4
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C
)
Collector current
Base current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
I
B
T
j
T
STG
RATING
60
50
5
250
150
50
125
-55 ~ +150
UNIT
V
V
V
mW
mA
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
Cob
NF
Test conditions
V
CB
=60V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=6V,Ic=2mA
V
CE
=6V,Ic=150mA
Ic=100mA,I
B
=10mA
Ic=100mA,I
B
=10mA
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0,f=1MHz
Ic=-0.1mA,V
CE
=6V
R
G
=10kΩ,f=100Hz
MIN
TYP
MAX
100
100
700
0.25
1.0
3.0
1.0
UNIT
nA
nA
120
25
0.1
80
2.0
1.0
V
V
MHz
pF
dB
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-014,C
UTCMMBT1815
RANK
RANGE
NPN EPITAXIAL SILICON TRANSISTOR
Y
120-240
GR
200-400
BL
350-700
CLASSIFICATION OF hFE1
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
100
10
3
Fig.2 DC current Gain
2
10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
80
H
FE
, DC current Gain
V
CE
=6V
2
10
Ic,Collector current (mA)
I
B
=300
µA
60
1
10
V
CE
=6V
I
B
=250
µA
40
I
B
=200
µA
I
B
=150
µA
1
10
0
10
20
I
B
=100
µA
I
B
=50
µA
0
0
4
8
12
16
20
10
0
-1
10
0
10
10
1
2
10
3
10
-1
10
0
0.2
0.4
0.6
0.8
1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4
10
3
10
Fig.5 Current gain-bandwidth
product
2
10
Fig.6 Collector output
Capacitance
Cob,Capacitance (pF)
Saturation voltage (mV)
Ic=10*I
B
Current Gain-bandwidth
product,f (MHz)
T
V
CE
=6V
2
10
3
10
V
BE
(sat)
1
10
f=1MHz
I
E
=0
2
10
V
CE
(sat)
1
10
0
10
1
10
-1
10
0
10
1
10
2
10
10
3
0
10
-1
10
0
10
1
10
10
2
-1
10
0
10
10
1
2
10
10
3
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-014,C
DSP 与 ARM 处理器
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