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JANKCAH2N7270

产品描述Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
产品类别分立半导体    晶体管   
文件大小155KB,共15页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
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JANKCAH2N7270概述

Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

JANKCAH2N7270规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码DIE
包装说明UNCASED CHIP, R-XUUC-N3
针数3
Reach Compliance Codecompliant
其他特性RADIATION HARDENED
外壳连接DRAIN
配置SINGLE
最大漏极电流 (Abs) (ID)11 A
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-XUUC-N3
湿度敏感等级1
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式UNCASED CHIP
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)150 W
认证状态Not Qualified
参考标准MIL-19500/657A
表面贴装YES
端子形式NO LEAD
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
Base Number Matches1

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 26 April 2011.
INCH-POUND
MIL-PRF-19500/657B
26 January 2011
SUPERSEDING
MIL-PRF-19500/657A
22 February 2000
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,
N AND P-CHANNEL, SILICON
VARIOUS TYPES JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N and P-channel, enhancement-mode,
MOSFET, radiation hardened, power transistor die. Two levels of product assurance are provided for each device
type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figures 1 through 8 herein.
1.3 Maximum ratings. See the applicable performance specification sheet from table I herein.
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
* DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or
https://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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