Philips Semiconductors
Product specification
Logic level TOPFET
BUK119-50DL
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin plastic
package.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
D
T
j
R
DS(ON)
I
ISL
PARAMETER
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
Input supply current
V
IS
= 5 V
MAX.
50
20
90
150
28
650
UNIT
V
A
W
˚C
mΩ
µA
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
FEATURES
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V
CLAMP
INPUT
RIG
POWER
MOSFET
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT78B
PIN
1
2
3
tab
input
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
mb
SYMBOL
D
TOPFET
I
P
1 2 3
Front view
MBL292
S
May 2001
1
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK119-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
DS
I
D
I
D
I
I
I
IRM
P
D
T
stg
T
j
T
sold
PARAMETER
Continuous drain source voltage
1
Continuous drain current
Continuous drain current
Continuous input current
Repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature
2
Lead temperature
CONDITIONS
V
IS
= 5 V; T
mb
= 25˚C
V
IS
= 5 V; T
mb
≤
121˚C
δ ≤
0.1, tp = 300
µs
T
mb
≤
25˚C
normal operation
during soldering
MIN.
-
-
-
-5
-50
-
-55
-
-
MAX.
50
self -
limited
20
5
50
90
175
150
260
UNIT
V
A
A
mA
mA
W
˚C
˚C
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
E
DSM
E
DRM
PARAMETER
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
CONDITIONS
I
DM
= 20 A; V
DD
≤
20 V
T
mb
≤
25˚C
T
mb
≤
95˚C; f = 250 Hz
MIN.
-
-
MAX.
350
45
UNIT
mJ
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
V
DS
PARAMETER
Drain source voltage
3
REQUIRED CONDITION
4 V
≤
V
IS
≤
5.5 V
MIN.
0
MAX.
35
UNIT
V
THERMAL CHARACTERISTIC
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance
Junction to mounting base
CONDITIONS
-
MIN.
-
TYP.
1.25
MAX.
1.39
UNIT
K/W
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK119-50DL
OUTPUT CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL
PARAMETER
Off-state
V
(CL)DSS
I
DSS
Drain-source clamping voltage
CONDITIONS
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 4 A; t
p
≤
300
µs; δ ≤
0.01
Drain source leakage current
On-state
R
DS(ON)
Drain-source resistance
V
DS
= 40 V
T
mb
= 25˚C
V
IS
≥
4.4 V; t
p
≤
300
µs; δ ≤
0.01
I
DM
= 10 A
T
mb
= 25˚C
-
-
-
22
52
28
mΩ
mΩ
50
50
-
-
-
60
-
0.1
-
70
100
10
V
V
µA
µA
MIN.
TYP.
MAX.
UNIT
OVERLOAD CHARACTERISTICS
V
IS
= 5 V; T
mb
= 25˚C unless otherwise specified.
SYMBOL
I
D
PARAMETER
Short circuit load
Drain current limiting
V
DS
= 13 V
4.4 V
≤
V
IS
≤
5.5 V;
-40˚C
≤
T
mb
≤
150˚C
Overload protection
P
D(TO)
T
DSC
T
j(TO)
Overload power threshold
Characteristic time
Overtemperature protection
Threshold junction
temperature
2
150
170
-
˚C
device trips if P
D
> P
D(TO)
which determines trip time
1
75
200
185
380
250
600
W
µs
28.5
21
43
-
57
65
A
A
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2
This is independent of the dV/dt of input voltage V
IS
.
May 2001
3
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK119-50DL
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL
V
IS(TO)
I
IS
I
ISL
V
ISR
t
lr
V
(CL)IS
R
IG
PARAMETER
Input threshold voltage
Input supply current
Input supply current
Protection reset voltage
1
Latch reset time
Input clamping voltage
Input series resistance
2
to gate of power MOSFET
CONDITIONS
V
DS
= 5 V; I
D
= 1 mA
T
mb
= 25˚C
normal operation;
protection latched;
reset time t
r
≥
100
µs
V
IS1
= 5 V, V
IS2
< 1 V
I
I
= 1.5 mA
T
mb
= 25˚C
V
IS
= 5 V
V
IS
= 4 V
V
IS
= 5 V
V
IS
= 3 V
MIN.
0.6
1.1
100
80
200
130
1.5
10
5.5
-
TYP.
-
1.6
220
195
400
250
2
40
-
33
MAX.
2.4
2.1
400
330
650
430
2.9
100
8.5
-
UNIT
V
V
µA
µA
µA
µA
V
µs
V
kΩ
SWITCHING CHARACTERISTICS
T
mb
= 25˚C; V
DD
= 13 V; resistive load R
L
= 4
Ω.
Refer to waveform figure and test circuit.
SYMBOL
t
d on
t
r
t
d off
t
f
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
IS
= 0 V
CONDITIONS
V
IS
= 5 V
MIN.
-
-
-
-
TYP.
25
50
60
50
MAX.
50
100
120
100
UNIT
µs
µs
µs
µs
1
The input voltage below which the overload protection circuits will be reset.
2
Not directly measureable from device terminals.
May 2001
4
Rev 1.900
Philips Semiconductors
Product specification
Logic level TOPFET
BUK119-50DL
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads
SOT78B
E
p1
∅
p
A
A1
q
D1
mounting
base
(2)
D
L1
L2
Q
L
b1
1
2
b
(1)
3
w
M
c
e
e
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
4.5
4.1
A1
1.39
1.27
b
(1)
0.85
0.60
b1
1.3
1.0
c
0.7
0.4
D
15.8
15.2
D1
6.4
5.9
E
10.3
9.7
e
2.54
L
15.0
13.5
L1
3.30
2.79
L2
max.
3.0
∅
p
3.8
3.6
p1
4.3
4.1
q
3.0
2.7
Q
2.6
2.2
w
0.4
Notes
1. The positional accuracy of the terminals is controlled within zone L1 max.
2. Mounting base configuration is not defined within the dimensions E and D
OUTLINE
VERSION
SOT78B
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-02-22
Fig.2. SOT78B (TO220AB) package
1
, pin 2 connected to mounting base.
1
Refer to mounting instructions for SOT78 (TO220) envelopes. Epoxy meets UL94 V0 at 1/8". Net mass: 2 g
May 2001
5
Rev 1.900
模拟与混合信号
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