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BYV36A

产品描述Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小75KB,共2页
制造商Gulf Semiconductor
官网地址http://www.gulfsemi.com/
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BYV36A概述

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, GLASS PACKAGE-2

BYV36A规格参数

参数名称属性值
厂商名称Gulf Semiconductor
包装说明E-LALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性LOW LEAKAGE CURRENT
应用FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.35 V
JESD-30 代码E-LALF-W2
最大非重复峰值正向电流30 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1.6 A
封装主体材料GLASS
封装形状ELLIPTICAL
封装形式LONG FORM
最大重复峰值反向电压200 V
最大反向电流5 µA
最大反向恢复时间0.1 µs
表面贴装NO
技术AVALANCHE
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

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BYV36A
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE: 200V
CURRENT: 1.6A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-57
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse Breakdown Voltage at IR =0. 1mA
Maximum Average Forward Rectified Current
at Ttp=60°C, lead length=10mm
Peak Forward Surge Current at t=10ms half
sinewave
Maximum Forward Voltage at rated Forward
Current and 25°C
I
F
= 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Maximum Reverse Recovery Time
Non Repetitive Reverse Avalanche Energy
at L=120Mh
Typical Diode Capacitance at f=1MHz,V
R
=0V
Typical Thermal Resistance
(Note 2)
Tj = 25°C
Tj = 165°C
(Note 1)
V
RRM
V
RMS
V
DC
V
(BR)R
I
F(AV)
I
FSM
V
F
I
R
Trr
E
R
Cd
R
th(ja)
Tstg, Tj
BYV36A
200
140
200
300min
1.6
30
1.35
5.0
150
100
10
45
100
-65 to +175
units
V
V
V
V
A
A
V
µA
nS
mJ
pF
K/W
Storage and Operating Junction Temperature
Note:
1. Reverse Recovery Condition I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer≥40μm
Rev.A1
www.gulfsemi.com

 
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