DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV36 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 30
1996 Jul 01
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
BYV36 series
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYV36A
BYV36B
BYV36C
BYV36D
BYV36E
BYV36F
BYV36G
V
R
continuous reverse voltage
BYV36A
BYV36B
BYV36C
BYV36D
BYV36E
BYV36F
BYV36G
I
F(AV)
average forward current
BYV36A to C
BYV36D and E
BYV36F and G
I
F(AV)
average forward current
BYV36A to C
BYV36D and E
BYV36F and G
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
1400
1.6
1.5
1.5
0.87
0.81
0.81
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
UNIT
T
tp
= 60
°C;
lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
T
amb
= 60
°C;
PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
−
−
−
−
−
−
1996 Jul 01
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYV36A to C
BYV36D and E
BYV36F and G
I
FRM
repetitive peak forward current
BYV36A to C
BYV36D and E
BYV36F and G
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Figs 17 and 18
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
T
amb
= 60
°C;
see Figs 11; 12 and 13
−
−
−
−
−
−65
−65
CONDITIONS
T
tp
= 60
°C;
see Figs 8; 9 and 10
−
−
−
BYV36 series
MIN.
MAX.
18
17
15
9
8
8
30
10
+175
+175
A
A
A
A
A
A
A
UNIT
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYV36A to C
BYV36D and E
BYV36F and G
V
F
forward voltage
BYV36A to C
BYV36D and E
BYV36F and G
V
(BR)R
reverse avalanche breakdown
voltage
BYV36A
BYV36B
BYV36C
BYV36D
BYV36E
BYV36F
BYV36G
I
R
reverse current
V
R
= V
RRMmax
; see Fig.22
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.22
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
150
V
V
V
V
V
V
V
µA
µA
I
F
= 1 A;
see Figs 19; 20 and 21
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 19; 20 and 21
MIN.
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
MAX.
1.00
1.05
1.05
1.35
1.45
1.45
V
V
V
V
V
V
UNIT
1996 Jul 01
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
t
rr
PARAMETER
reverse recovery time
BYV36A to C
BYV36D and E
BYV36F and G
C
d
diode capacitance
BYV36A to C
BYV36D and E
BYV36F and G
dI
R
--------
dt
maximum slope of reverse recovery when switched from
I
F
= 1 A to V
R
≥
30 V and
current
dI
F
/dt =
−1
A/µs;
BYV36A to C
see Fig.27
BYV36D and E
BYV36F and G
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
f = 1 MHz; V
R
= 0 V;
see Figs 23 and 24
CONDITIONS
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 26
MIN.
−
−
−
−
−
−
BYV36 series
TYP.
−
−
−
45
40
35
MAX.
100
150
250
−
−
−
UNIT
ns
ns
ns
pF
pF
pF
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
VALUE
46
100
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.25.
For more information please refer to the
“General Part of associated Handbook”.
1996 Jul 01
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
1.6
I F(AV)
(A)
1.2
20 15
10 lead length (mm)
MSA867
BYV36 series
1.6
I F(AV)
(A)
1.2
20 15
10
MSA866
lead length (mm)
0.8
0.8
0.4
0.4
0
0
BYV36A to C
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
0
0
BYV36D and E
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
Fig.2
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
2.0
MBD419
I F(AV)
(A)
1.6
handbook, halfpage
1.2
MSA865
I F(AV)
(A)
lead length 10 mm
0.8
1.2
0.8
0.4
0.4
0
0
100
Ttp ( C)
o
0
200
0
100
Tamb (
o
C)
200
BYV36F and G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
BYV36A to C
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.4
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 Jul 01
5
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