Semiconductor
TMF8901F
Si RF LDMOS Transistor
SOT-89
Unit in mm
□
Applications
- VHF and UHF wide band amplifier
4
□
Features
- Power gain
G
P
= 12.5 dB at V
DS
= 4.5 V, I
Dset
= 200 mA, f = 470 MHz
- Output power
P
OUT
= 32 dBm at V
DS
= 4.5 V, I
Dset
= 200 mA, f = 470 MHz
- Drain efficiency
η
D
= 60 % (typ.)
□
Marking
4
Pin Configuration
1. Gate
2. Source
8901
1
2
3
3. Drain
4. Source
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
tot
Tch
T
stg
Ratings
13.0
4.0
1.2
3
150
-65 ~ 150
Unit
V
V
A
W
℃
℃
TMF8901F
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Gate to Source Leakage Current
Drain to Source Leakage Current
Threshold Voltage
Transconductance
Drain to Source Breakdown
Voltage
Drain to Source On-Voltage
Power Gain
Output Power
Operating Current
Drain Efficiency
Power Gain
Output Power
Operating Current
Drain Efficiency
Symbol
I
GSS
I
DSS
V
th
G
m
BV
DSS
V
DSon
G
P
P
OUT
I
op
η
D
G
P
P
OUT
I
op
η
D
f = 470 MHz, P
IN
= 15 dBm
V
DS
= 4.5 V, I
Dset
= 50
㎃
f = 470 MHz, P
IN
= 15 dBm
V
DS
= 4.5 V, I
Dset
= 50
㎃
Test Conditions
V
GSS
= 3.0 V
V
DSS
= 8.5 V, V
GS
= 0 V
V
DS
= 4.8 V, I
D
= 1
㎃
V
DS
= 4.8 V, I
D
= 400
㎃
I
DSS
= 10
㎂
V
GS
= 4 V, I
D
= 600
㎃
f = 470 MHz, P
IN
= 20 dBm
V
DS
= 4.5 V, I
Dset
= 200
㎃
f = 470 MHz, P
IN
= 20 dBm
V
DS
= 4.5 V, I
Dset
= 200
㎃
13
0.4
12.5
32
670
60
14
29
400
44
0.8
1.0
700
Min.
Typ.
Max.
1
10
1.4
Unit
㎂
㎂
V
mS
V
V
dB
dBm
mA
%
dB
dBm
mA
%
TMF8901F
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Output Power, Power Gain, Drain Efficiency
vs. Input Power
40
35
f = 470 MHz
I
idle
= 200 mA
V
DS
= 4.5 V
P
OUT
η
D
80
70
40
35
f = 470 MHz
I
idle
= 50 mA
V
DS
= 4.5 V
P
OUT
80
70
60
50
η
D
Output Power, P
OUT
(dBm)
Power Gain, G
P
(dB)
Output Power, P
OUT
(dBm)
Power Gain, G
P
(dB)
Drain Efficiency,
η
D
(%)
30
25
20
15
10
5
0
0
5
10
15
20
G
P
60
50
40
30
20
10
0
25
30
25
20
15
10
5
0
0
5
10
15
20
G
P
40
30
20
10
0
25
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
Output Power vs. Input Power
40
35
f = 470 MHz
V
DS
= 4.5 V
I
idle
= 200 mA
Drain Current vs. Input Power
900
800
f = 470 MHz
V
DS
= 4.5 V
Output Power, P
OUT
(dBm)
30
25
20
15
10
5
0
0
5
10
15
20
25
I
idle
= 50 mA
Drain Current, I
DS
(mA)
700
600
500
400
300
200
100
0
0
5
10
15
20
25
I
idle
= 50 mA
I
idle
= 200 mA
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
Drain Efficiency,
η
D
(%)
TMF8901F
Power Gain, Drain Efficiency
vs. Drain Voltage
18
17
f = 470 MHz
I
idle
= 200 mA
P
IN
= 20 dBm
65
η
D
Power Gain, Drain Efficiency
vs. Drain Current
70
18
17
f = 470 MHz
P
IN
= 20 dBm
V
DS
= 4.5 V
η
D
70
68
Drain Efficiency,
η
D
(%)
Power Gain, G
P
(dB)
Power Gain, G
P
(dB)
16
15
14
13
G
P
12
11
10
2
3
4
5
6
7
8
15
14
13
12
11
10
9
G
P
64
62
60
58
56
54
52
0
50
100
150
200
250
50
300
60
55
50
8
Drain Voltage, V
DS
(V)
Drain Idle Current, I
idle
(mA)
Output Power vs. Input Power
40
35
f = 470 MHz
I
idle
= 200 mA
V
DS
= 6 V
Drain Current vs. Input Power
1100
1000
900
f = 470 MHz
I
idle
= 200 mA
V
DS
= 6.0 V
V
DS
= 4.5 V
Output Power, P
OUT
(dBm)
Drain Current, I
DS
(mA)
30
25
20
15
10
5
0
5
10
15
800
700
600
500
400
300
200
100
V
DS
= 3.6 V
V
DS
= 4.5 V
V
DS
= 3.6 V
20
25
0
0
5
10
15
20
25
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
Drain Efficiency,
η
D
(%)
16
66
TMF8901F
Output Power, Power Gain, Drain Efficiency
vs. Input Power
40
35
f = 470 MHz
I
idle
= 200 mA
V
DS
= 3.6 V
80
70
40
35
f = 470 MHz
I
idle
= 50 mA
V
DS
= 6.0 V
P
OUT
80
70
60
50
η
D
Output Power, P
OUT
(dBm)
Power Gain, G
P
(dB)
Output Power, P
OUT
(dBm)
Power Gain, G
P
(dB)
Drain Efficiency,
η
D
(%)
30
25
20
15
10
5
0
0
5
10
15
20
G
P
η
D
60
50
40
30
20
10
0
25
30
25
20
15
10
5
0
0
5
10
15
20
P
OUT
40
30
20
10
0
25
G
P
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
□
Test Circuit Schematic Diagram
VGG
R1
R=6.8 kOhm
C6
C=100 nF
C5
C=10 nF
L2
L=100 nH
R=
T L1
Subst="M Sub1"
W=1.37 m m
L=22 m m
L1
M odel=0.4x2.0x6T
C7
C=10 nF
C8
C=100 nF
VDD
C4
C=2.2 nF
C1
C=2.2 nF
T M F8901F
P_IN
C2
C=24 pF
C9
C=2.2 nF
R2
R=56 Ohm
T L2
Subst="M Sub1"
W=1.37 m m
L=15 m m
P_OUT
C3
C=18 pF
Test Board : 0.8mm FR4 glass epoxy
Drain Efficiency,
η
D
(%)
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