Semiconductor
TMF8901B
Si RF LDMOS Transistor
SOT-223
Unit in mm
□
Applications
- VHF and UHF wide band amplifier
6.5
3.0
□
Features
- Power gain
G
P
= 12.4 dB at V
DS
= 4.5 V, I
Dset
= 200 mA, f = 470 MHz
G
P
= 14.7 dB at V
DS
= 6.0 V, I
Dset
= 200 mA, f = 470 MHz
- Output power
P
OUT
= 32.4 dBm at V
DS
= 4.5 V, I
Dset
= 200 mA, f = 470 MHz
P
OUT
= 34.7 dBm at V
DS
= 6.0 V, I
Dset
= 200 mA, f = 470 MHz
- Drain efficiency
η
D
= 60 % (typ.)
1
2.3
0.7
4.6
4
2
3
□
Marking
4
Pin Configuration
1. Gate
2. Source
3. Drain
4. Source
8901
1
2
3
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
Ratings
13.0
4.0
1.2
5.0
150
-65 ~ 150
Unit
V
V
A
W
℃
℃
3.5
7.0
1
TMF8901B
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Gate to Source Leakage Current
Drain to Source Leakage Current
Threshold Voltage
Transconductance
Drain to Source Breakdown
Voltage
Drain to Source On-Voltage
Power Gain
Output Power
Operating Current
Drain Efficiency
Power Gain
Output Power
Operating Current
Drain Efficiency
Symbol
I
GSS
I
DSS
V
th
G
m
BV
DSS
V
DSon
G
P
P
OUT
I
op
η
D
G
P
P
OUT
I
op
η
D
f = 470 MHz, P
IN
= 20 dBm
V
DS
= 6.0 V, I
Dset
= 200 mA
f = 470 MHz, P
IN
= 20 dBm
V
DS
= 6.0 V, I
Dset
= 200 mA
Test Conditions
V
GSS
= 3.0 V
V
DSS
= 8.5 V, V
GS
= 0 V
V
DS
= 4.8 V, I
D
= 1 mA
V
DS
= 4.8 V, I
D
= 400 mA
I
DSS
= 10
㎂
V
GS
= 4 V, I
D
= 600 mA
f = 470 MHz, P
IN
= 20 dBm
V
DS
= 4.5 V, I
Dset
= 200 mA
f = 470 MHz, P
IN
= 20 dBm
V
DS
= 4.5 V, I
Dset
= 200 mA
Min.
-
-
0.8
-
13
-
11
31
-
-
13
33
-
-
Typ.
-
-
1.0
700
-
0.4
12.4
32.4
600
64
14.7
34.7
805
61
-
-
-
-
-
-
-
-
-
-
Max.
1
10
1.4
-
Unit
㎂
㎂
V
mS
V
V
dB
dBm
mA
%
dB
dBm
mA
%
2
TMF8901B
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Output Power, Power Gain, Drain Efficiency
vs. Input Power
45
40
f = 470 MHz
I
idle
= 200 mA
V
DS
= 4.5 V
90
80
45
40
f = 470 MHz
I
idle
= 200 mA
V
DS
= 6.0 V
P
OUT
90
80
70
η
D
Output Power, P
OUT
(dBm)
Power Gain, G
P
(dB)
Output Power, P
OUT
(dBm)
Power Gain, G
P
(dB)
Drain Efficiency,
η
D
(%)
35
30
P
OUT
70
60
η
D
35
30
25
20
15
10
5
0
5
10
15
20
G
P
60
50
40
30
20
10
25
25
20
15
10
5
0
5
10
G
P
50
40
30
20
10
25
15
20
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
Output Power vs. Input Power
50
45
f = 470 MHz
I
idle
= 200 mA
V
DS
= 6 V
Drain Current vs. Input Power
1100
1000
900
f = 470 MHz
I
idle
= 200 mA
Output Power, P
OUT
(dBm)
40
35
30
25
20
15
10
0
5
10
15
20
25
Drain Current, I
DS
(mA)
V
DS
= 6.0 V
800
700
600
500
400
300
200
100
0
0
5
10
15
20
25
V
DS
= 4.5 V
V
DS
= 4.5 V
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
Drain Efficiency,
η
D
(%)
3
TMF8901B
Power Gain, Drain Efficiency
vs. Drain Idle Current
18
17
16
f = 470 MHz
P
IN
= 20 dBm
V
DS
= 4.5 V
η
D
70
68
20
19
f = 470 MHz
P
IN
= 20 dBm
V
DS
= 6.0 V
η
D
70
68
Drain Efficiency,
η
D
(%)
15
14
13
12
11
10
9
8
0
50
100
150
200
250
G
P
64
62
60
58
56
54
52
50
300
17
16
15
14
13
12
11
10
0
50
100
150
200
G
P
64
62
60
58
56
54
52
250
50
300
Drain Idle Current, I
idle
(mA)
Drain Idle Current, I
idle
(mA)
Power Gain, Drain Efficiency
vs. Drain Voltage
17
16
f = 470 MHz
I
idle
= 200 mA
P
IN
= 20 dBm
70
75
Power Gain, G
P
(dB)
15
14
13
12
11
10
9
2
3
4
5
6
7
G
P
η
D
65
60
55
Drain Voltage, V
DS
(V)
Drain Efficiency,
η
D
(%)
Drain Efficiency,
η
D
(%)
66
18
66
Power Gain, G
P
(dB)
Power Gain, G
P
(dB)
4
TMF8901B
□
Test Circuit Schematic Diagram
Port
VGG
R
R1
R=6.8 kOhm
C
C5
C=10 nF
L
L2
L=100 nH
R=
MLIN
TL1
Subst="MSub1"
W
=1.37 mm
L=19 mm
R
R2
R=56 Ohm
C
C7
C=10 nF
C
C8
C=100 nF
Port
VDD
L
L1
Model=0.4x2.0x6T
C
C1
C=2.2 nF
Port
P_IN
C
C4
C=2.2 nF
MLIN
TL2
Subst="MSub1"
W
=1.37 mm
L=8 mm
Port
P_OUT
C
C3
C=18 pF
EE_MOS1
TMF8901B
C
C2
C=22 pF
C
C9
C=2.2 nF
Test Board : 0.8mm FR4 glass epoxy
5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
