Semiconductor
TBN6501U
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
□
Applications
- Broadband amplifier application under 1GHz
- SAW filter driver in TV tuners
2.0±0.2
1.30±0.1
1
3
2
0.30±0.1
0.1 Min.
□
Features
- Gain bandwidth product
f
T
= 1.1 GHz at V
CE
= 3 V, I
C
= 20 mA
f
T
= 1.5 GHz at V
CE
= 5 V, I
C
= 30 mA
- Power gain
|S
21
|
2
= 3.0 dB at V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
- Noise figure
NF = 1.8 dB at V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
0.90±0.1
Pin Configuration
1. Base
2. Emitter
3. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
8
3
100
200
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
0~0.1
0.15±0.05
1
TBN6501U
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Symbol
I
CBO
I
CEO
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 15 V, I
E
= 0 mA
V
CE
= 8 V, I
B
= 0 mA
V
EB
= 2 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 20 mA
V
CE
= 5 V, I
C
= 30 mA
Insertion Power Gain
|S
21
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 5 V, I
C
= 30 mA, f = 1 GHz
Noise Figure
Reverse Transfer Capacitance
NF
C
re
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
Min.
-
-
-
50
0.9
1.3
-
-
-
-
Typ.
-
-
-
-
1.1
1.5
3.0
4.0
1.8
2.0
Max.
0.5
10
0.5
250
-
-
-
-
-
-
pF
GHz
GHz
dB
dB
Unit
㎂
㎂
㎂
□
h
FE
Classification
Marking
h
FE
Value
SD2
80 - 160
SD1
125 - 250
2
TBN6501U
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Power Dissipation
vs. Ambient Temperature
300
3.0
Reverse Transfer Capacitance
vs. Collector to Base Voltage
Reverse Transfer Capacitance, C
re
(pF)
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0
f = 1 MHz
Power Dissipation, P
C
(mW)
250
200
150
100
50
0
0
25
50
75
100
o
125
150
1
2
3
4
5
6
7
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
300
V
CE
= 3 V
250
Collector Current
vs. Base to Emitter Voltage
30
25
V
CE
= 3 V
Collector Current, I
C
[mA]
1
10
100
DC Current Gain, h
FE
200
150
100
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
50
0
0.1
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
[V]
3
TBN6501U
Collector Current
vs. Collector to Emitter Voltage
50
Gain Bandwidth Product
vs. Collector Current
3.0
Gain Bandwidth Product, f
T
(GHz)
45
I
B
Step = 50
µ
A
Collector Current, I
C
(mA)
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
2.5
2.0
1.5
1.0
0.5
0.0
10
V
CE
= 3 V
V
CE
= 5 V
20
30
40
50
60
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Insertion Power Gain
vs. Collector Current
6
9
Maximum Available Gain
vs. Collector Current
Maximum Available Gain, MAG (dB)
Insertion Power Gain, |S
21
| (dB)
5
V
CE
= 3 V
V
CE
= 5 V
f = 1 GHz
8
7
6
5
4
3
2
1
0
10
V
CE
= 3 V
V
CE
= 5 V
f = 1 GHz
2
4
3
2
1
0
10
100
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
