Semiconductor
TBN4228 Series
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
□
Applications
- VHF and UHF low noise amplifier
2.0±0.2
1.30±0.1
1
3
2
0.30±0.1
0.1 Min.
□
Features
- High gain bandwidth product
f
T
= 9 GHz at V
CE
= 3 V, I
C
= 5 mA
- High power gain
|S
21
|
2
= 6.6 dB at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
|S
21
|
2
= 12 dB at V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
0.90±0.1
NF = 1.9 dB at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
NF = 1.2 dB at V
CE
= 3 V, I
C
= 3 mA, f = 1 GHz
Pin Configuration
1. Base
2. Emitter
3. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
8
3
35
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
0~0.1
- Low noise figure
0.15±0.05
1
TBN4228 Series
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Symbol
I
CBO
I
EBO
h
FE
f
T
|S
21
|
2
Test Conditions
V
CB
= 15 V, I
E
= 0 mA
V
EB
= 2 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 5 mA
V
CE
= 3 V, I
C
= 5 mA
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
Noise Figure
Reverse Transfer Capacitance
NF
C
re
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
Min.
-
-
70
6.0
5.0
10.0
-
-
Typ.
-
-
100
9.0
6.6
12.0
1.9
0.5
Max.
0.5
0.5
250
-
-
-
3.0
0.8
dB
pF
GHz
dB
Unit
㎂
㎂
□
h
FE
Classification
Marking
h
FE
Value
SO2
70 - 140
SO1
125 - 250
□
Available Package
Product
TBN4228S
TBN4228U
TBN4228E
TBN4228KF
Package
SOT-23
SOT-323
SOT-523
SOT-623F
Unit in mm
Dimension
2.9
ⅹ
1.3, 1.2t
2.0
ⅹ
1.25, 1.0t
1.6
ⅹ
0.8, 0.8t
1.4
ⅹ
0.8, 0.6t
2
TBN4228 Series
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Total Power Dissipation
vs. Ambient Temperature
250
Reverse Transfer Capacitance
vs. Collector to Base Voltage
0.8
Reverse Transfer Capacitance, C
re
(pF)
Total Power Dissipation, P
tot
(mW)
Free Air
200
f = 1 MHz
0.7
0.6
0.5
0.4
0.3
0.2
150
100
50
0
0
25
50
75
100
o
125
150
0
2
4
6
8
10
12
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
300
V
CE
= 3 V
Collector Current
vs. Base to Emitter Voltage
30
V
CE
= 3 V
25
100
Collector Current, I
C
(mA)
1
10
50
DC Current Gain, h
FE
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
50
10
0.5
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
3
TBN4228 Series
Collector Current
vs. Collector to Emitter Voltage
14
14
Gain Bandwidth Product
vs. Collector Current
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product, f
T
(GHz)
12
12
10
8
6
4
2
0
Collector Current, I
C
(mA)
10
8
6
4
2
0
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
1
10
50
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Insertion Power Gain
vs. Frequency
25
Insertion Power Gain
vs. Collector Current
16
V
CE
= 3 V
f = 1 GHz
Insertion Power Gain, |S
21
| (dB)
20
Insertion Power Gian, |S
21
| (dB)
V
CE
= 3 V
I
C
= 5 mA
14
12
10
8
6
4
2
0
1
2
15
2
f = 2 GHz
10
5
0
0.1
1
5
10
50
Frequency (GHz)
Collector Current, I
C
(mA)
4
TBN4228 Series
Maximum Available Gain
vs. Collector Current
20
V
CE
= 3 V
f = 1 GHz
5
V
CE
= 3 V
4
Noise Figure
vs. Collector Current
Maximum Available Gain, MAG (dB)
18
16
14
12
10
8
6
4
2
0
1
Noise Figure, NF (dB)
3
f = 2 GHz
2
f = 1 GHz
f = 2 GHz
1
10
50
0
0.5
1
10
50
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Noise Parameter vs. Frequency
(at V
CE
= 3 V, I
C
= 5 mA)
Frequency
(GHz)
0.9
1
1.5
2
Fmin (dB)
1.579
1.465
1.745
1.984
rn
0.493
0.474
0.446
0.364
Γ
opt
Mag
0.5441
0.5147
0.4479
0.3423
Phase
24.21
30.26
38.57
47.01
Association gain
(dB)
11.591
11.087
8.4
6.902
G
max
(dB)
15.517
14.827
10.687
8.926
5
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