Semiconductor
TBN4227 Series
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
□
Applications
- VHF and UHF low noise amplifier
- Wide band amplifier
2.0±0.2
1.30±0.1
1
3
2
0.30±0.1
0.1 Min.
□
Features
- High gain bandwidth product
f
T
= 8 GHz at V
CE
= 3 V, I
C
= 7 mA
f
T
= 9 GHz at V
CE
= 3 V, I
C
= 20 mA
- High power gain
- Low noise figure
NF = 1.2 dB at V
CE
= 3 V, I
C
= 3 mA, f = 1 GHz
|S
21
|
2
= 11.4 dB at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
0.90±0.1
Pin Configuration
1. Base
2. Emitter
3. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
8
3
65
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
0~0.1
0.15±0.05
1
TBN4227 Series
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
|S
21
|
2
NF
C
re
Test Conditions
V
CB
= 15 V, I
E
= 0 mA
V
EB
= 2 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 7 mA
V
CE
= 3 V, I
C
= 7 mA
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
Min.
-
-
70
5.0
9.0
-
-
Typ.
-
-
100
8.0
11.4
1.2
0.62
Max.
0.5
0.5
250
-
-
2.0
0.9
GHz
dB
dB
pF
Unit
㎂
㎂
□
h
FE
Classification
Marking
h
FE
Value
SL2
70 - 140
SL1
125 - 250
□
Available Package
Product
TBN4227S
TBN4227U
TBN4227E
TBN4227KF
Package
SOT-23
SOT-323
SOT-523
SOT-623F
Unit in mm
Dimension
2.9
ⅹ
1.3, 1.2t
2.0
ⅹ
1.25, 1.0t
1.6
ⅹ
0.8, 0.8t
1.4
ⅹ
0.8, 0.6t
2
TBN4227 Series
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Total Power Dissipation
vs. Ambient Temperature
Reverse Transfer Capacitance, C
re
(pF)
250
Reverse Transfer Capacitance
vs. Collector to Base Voltage
1.0
Total Power Dissipation, P
tot
(mW)
Free Air
200
0.9
0.8
0.7
0.6
0.5
0.4
f = 1 MHz
150
100
50
0
0
25
50
75
100
o
125
150
0
2
4
6
8
10
12
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
300
V
CE
= 3 V
25
30
Collector Current
vs. Base to Emitter Voltage
V
CE
= 3 V
100
Collector Current, I
C
(mA)
1
10
50
DC Current Gain, h
FE
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
50
10
0.5
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
3
TBN4227 Series
Collector Current
vs. Collector to Emitter Voltage
25
14
Gain Bandwidth Product
vs. Collector Current
V
CE
= 3 V
f = 1 GHz
Gain Bandwidth Product, f
T
(GHz)
Collector Current, I
C
(mA)
12
10
8
6
4
2
0
20
120
µ
A
15
100
µ
A
80
µ
A
10
60
µ
A
40
µ
A
5
I
B
= 20
µ
A
0
0
1
2
3
4
5
1
10
50
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Insertion Power Gain
vs. Frequency
30
25
20
15
10
5
0
0.1
Insertion Power Gain
vs. Collector Current
16
Insertion Power Gian, |S
21
| (dB)
Insertion Power Gain, |S
21
| (dB)
V
CE
= 3 V
I
C
= 7 mA
14
12
10
8
6
4
2
0
1
V
CE
= 3 V
f = 1 GHz
2
1
10
2
10
50
Frequency (GHz)
Collector Current, I
C
(mA)
4
TBN4227 Series
Maximum Available Gain
vs. Collector Current
20
5
V
CE
= 3 V
f = 1GHz
V
CE
= 3 V
f = 1 GHz
Noise Figure
vs. Collector Current
Maximum Available Gain, MAG (dB)
18
16
4
Noise Figure, NF (dB)
14
12
10
8
6
4
2
0
1
10
50
3
2
1
0
0.5
1
10
50
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Noise Parameter vs. Frequency
(at V
CE
= 3 V, I
C
= 3 mA)
Frequency
(GHz)
0.9
1
1.5
1.8
Fmin (dB)
1.193
1.147
1.302
1.636
rn
0.383
0.376
0.327
0.313
Γ
opt
Mag
0.5427
0.5287
0.4514
0.353
Phase
37.04
40.24
56.36
67.11
Association gain
(dB)
10.477
9.799
7.374
6.607
G
max
(dB)
13.809
13.274
9.887
8.27
5
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