Supertex inc.
Features
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VP3203
P-Channel Enhancement-Mode
Vertical DMOS FET
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
Applications
►
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Part Number
VP3203N3-G
VP3203N3-G P002
VP3203N3-G P003
VP3203N3-G P005
VP3203N3-G P013
VP3203N3-G P014
VP3203N3-G
TO-243AA (SOT-89)
2000/Reel
3-Lead TO-92
2000/Reel
Package Option
3-Lead TO-92
Packing
1000/Bag
Product Summary
BV
DSS
/BV
DGS
-30V
R
DS(ON)
(max)
I
D(ON)
(min)
0.6Ω
-4.0A
Pin Configuration
DRAIN
DRAIN
SOURCE
GATE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
SOURCE
DRAIN
GATE
TO-92
TO-243AA (SOT-89)
Product Marking
S iVP
3 20 3
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package may or may not include the following marks: Si or
TO-92
VP2LW
Typical Thermal Resistance
Package
TO-92
TO-243AA (SOT-89)
Doc.# DSFP-VP3203
B082613
θ
ja
132
O
C/W
133
O
C/W
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89)
Package may or may not include the following marks: Si or
Supertex inc.
www.supertex.com
VP3203
Thermal Characteristics
Package
TO-92
TO-243AA (SOT-89)
†
‡
(continuous)
I
D
†
(pulsed)
I
D
Power Dissipation
@T
A
= 25
O
C
I
DR
†
-650mA
-1100mA
I
DRM
-4.0A
-4.0A
-650mA
-1100mA
-4.0A
-4.0A
0.74W
1.6
‡
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
A
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
Parameter
Gate threshold voltage
= 25
O
C unless otherwise specified)
Min
-30
-1.0
-
-
-
Typ
-
-
-
-1.0
-
-
-14
-
-
-
-
-
2000
200
100
45
-
-
-
-
-
300
Max
-
-3.5
-5.5
-100
-10
-1.0
-
1.0
1.0
0.6
0.6
1.0
-
300
120
60
10
15
25
25
-1.6
-
Units
V
V
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= -10mA
V
GS
= V
DS
, I
D
= -10mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= -10V, V
DS
= -5.0V
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -4.5V, I
D
= -750mA
V
GS
= -10V, I
D
= -3.0A
V
GS
= -10V, I
D
= -1.5A
V
GS
= -10V, I
D
= -1.5A
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
V
DD
= -25V,
I
D
= -2.0A,
R
GEN
= 10Ω
V
GS
= 0V, I
SD
= -1.5A
V
GS
= 0V, I
SD
= -1.0A
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
TO-92
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
SOT-89
TO-92
SOT-89
mV/
O
C V
GS
= V
DS
, I
D
= -10mA
-
-
-
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
R
DS(ON)
Ω
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
%/
O
C
mmho V
DS
= -25V, I
D
= -2.0A
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
90%
t
(OFF)
t
r
t
d(OFF)
t
f
Pulse
Generator
R
GEN
D.U.T.
INPUT
t
(ON)
t
d(ON)
0V
OUTPUT
R
L
VDD
OUTPUT
VDD
90%
10%
90%
10%
Doc.# DSFP-VP3203
B082613
2
Supertex inc.
www.supertex.com
VP3203
Typical Performance Curves
(cont.)
-20
Output Characteristics
V
GS
= -10V
-20
Saturation Characteristics
V
GS
= -10V
-16
-16
I
D
(amperes)
I
D
(amperes)
-12
-8V
-12
-8V
-8.0
-6V
-8.0
-6V
-4.0
-4.0
-4V
0
-4V
-3V
-30
0
-3V
0
-5.0
-10
-15
-20
-25
0
-2.0
-4.0
-6.0
-8.0
-10
V
DS
(volts)
V
DS
(volts)
5.0
Transconductance vs. Drain Current
V
DS
= -25V
Power Dissipation vs. Ambient Temperature
20
4.0
16
TO-243AA
G
FS
(siemens)
T
A
= 125
O
C
T
A
= 25
O
C
2.0
P
D
(watts)
-5.0
3.0
12
T
A
= -55
O
C
1.0
8.0
TO-92
4.0
0
0
-1.0
-2.0
I
D
(amperes)
-3.0
-4.0
0
0
25
50
75
100
125
150
T
A
( C)
O
Maximum Rated Safe Operating Area
-10
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-243AA (pulsed)
TO-92 (pulsed)
0.8
I
D
(amperes)
-1.0
TO-243AA(DC)
TO-92 (DC)
0.6
TO-243AA
P
D
= 1.6W
T
A
= 25
O
C
0.4
-0.1
0.2
-0.01
-0.1
T
A
= 25
O
C
-1.0
V
DS
(volts)
-10
-100
0
TO-92
P
D
= 1W
T
C
= 25
O
C
0.001
0.01
0.1
1.0
10
t
p
(seconds)
Doc.# DSFP-VP3203
B082613
4
Supertex inc.
www.supertex.com
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