MwT-8
16 GHz High Power
GaAs FET
DOWNLOAD ADDITIONAL DATA
WWW.MWTINC.COM
75
All Dimensions in Microns
75
68
305
100
FEATURES
•
0.6 WATT POWER OUTPUT AT 12 GHz
•
+40 THIRD ORDER INTERCEPT
•
HIGH ASSOCIATED GAIN
•
0.3 MICRON REFRACTORY METAL/GOLD GATE
•
1200 MICRON GATE WIDTH
•
CHOICE OF CHIP AND ONE PACKAGE TYPE
64
75
122
673
75
64
CHIP THICKNESS = 125
DESCRIPTION
The MwT-8 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point
communications links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept
performance of the MwT-8 is excellent, typically 12 dB above the 1 dB compression point. The chip is produced using MwT’s reliable
metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like
Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss
ranges, insuring consistent circuit operation.
DC SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
RF SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 5.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.8 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.8 mA
Thermal
Resistance
mA
mS
V
V
V
120
144
160
-2.0
-6.0
-8.0
-12.0
480
P1dB
PAE
Output Power at 1 dB Compression
VDS= 6.0 V IDS=180mA
Power Added Efficiency
VDS= 6.0 V IDS=180mA
Small Signal Gain
VDS= 6.0V IDS= 180mA
Recommended IDSS Range
for Optimum P1dB
12 GHz
12 GHz
12 GHz
dBm
%
dB
mA
27.0
25
7
28.0
35
7.5
320-
440
-5.0
SSG
IDSS
-12.0
45
60*
MwT-8 Chip,
°
C/W
MwT-871,
*Overall Rth depends on case mounting.
DEVICE EQUIVALENT CIRCUIT MODEL
Lg
GATE
PARAMETER
Rd
Rds
Cds
Cpd
Ld
DRAIN
VALUE
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.3
0.055
60.0
0.1
0.3
0.2
0.1
0.12
0.25
0.2
1.4
1.0
0.05
150.0
1.0
Ω
nH
Ω
pF
Ω
pF
nH
nH
pF
Ω
pF
Ω
pF
mS
psec
Rg
Cgs
Cgd
Cpg
Ri
gm
tau
Rs
Ls
SOURCE
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
ORDERING INFORMATION
Chip
Package 71
MwT-8
MwT-871
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-8
16 GHz High Power
GaAs FET
MwT-8
DUAL BIAS
Output Reference
Plane
14 Mils Long
Copper Heat Sink
5 Mils Below Level
of Microstrip
MwT
FP8
MwT-8
OPTIONAL BONDING
Output Reference
Plane
2 Mils
15 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
MwT
FP8
50
Ω
Output
Microstrip
50
Ω
Output
Microstrip
2 Mils
20 Mils
20 Mils
7 Mils Long
18 Mils Long
Input Reference
Plane
50
Ω
Input
Microstrip
2 Mils
Gold Ridge
5x 33x 5 Mils
All Bond
(1 each)
7 Mils Long
50
Ω
Input
Microstrip
Input Reference
Plane
2 Mils
Wires are 1.0
Mil Diameter
All Bond
Wires are 1.0
Mil Diameter
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
700
150
600
500
Ids (mA)
400
300
200
100
0
0
2
125
100
125
100
75°
C or Lower
°
Absolute Maximum
Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°
C
75°
C or Lower
°
SYMBOL
PARAMETER
UNITS
CONT MAX
1
ABSOLUTE MAX
2
VDS
Tch
Tst
Pin
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
V
°C
°C
mW
See Safe Operating Limits
+150
+175
-65 to +150
+175
480
720
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
4
Vds (V)
6
8
BIN SELECTION
BIN#
IDSS
(mA)
1
2
3
4
180-
200
5
200-
220
6
220-
240
7
240-
260
8
260-
280
9
280-
300
10
300-
320
11
320-
340
12
340-
360
13
360-
380
14
380-
400
15
400-
420
16
420-
440
17
440-
460
18
460-
480
120- 140- 160-
140 160 180
BIN ACCURACY STATEMENT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
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