Bulletin I25170 rev. B 04/00
ST333C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
720A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST333C..C
720
55
1435
25
11000
11500
605
553
400 to 800
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
www.irf.com
1
ST333C..C Series
Bulletin I25170 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST333C..C
04
08
400
800
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
50
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
1630
1630
1350
720
50
V
DRM
50
40
I
TM
180
o
el
1420
1390
1090
550
50
50
55
2520
2670
2440
1450
50
V
DRM
-
40
I
TM
100µs
2260
2330
2120
1220
50
-
55
7610
4080
2420
1230
50
V
DRM
-
40
I
TM
Units
6820
3600
2100
1027
50
-
55
V
A/µs
°C
A
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST333C..C
720 (350)
55 (75)
1435
11000
11500
9250
9700
Units
A
°C
Conditions
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
t
Maximum I
2
t for fusing
605
553
428
391
KA
2
s
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
6050
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
2
www.irf.com
ST333C..C Series
Bulletin I25170 rev. B 04/00
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
Low level value of forward
slope resistance
t
2
ST333C..C Units
1.96
0.91
0.93
0.58
mΩ
0.58
600
1000
mA
V
Conditions
I
TM
= 1810A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
High level value of forward
slope resistance
Maximum holding current
Typical latching current
I
H
I
L
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST333C..C
1000
1.1
Min
10
Max
30
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
µs
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST333C..C
500
50
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST333C..C
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
www.irf.com
3
ST333C..C Series
Bulletin I25170 rev. B 04/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST333C..C
-40 to 125
-40 to 150
0.09
0.04
0.020
0.010
9800
(1000)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
83
TO - 200AB (E-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
0.010
0.012
0.015
0.022
0.036
0.011
0.012
0.015
0.022
0.036
0.007
0.012
0.016
0.023
0.036
0.007
0.013
0.017
0.023
0.036
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
33
2
3
3
C
4
08
5
C
6
H
7
K
8
1
9
10
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (E-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
dv/dt - t
q
combinations available
dv/dt (V/µs)
10
12
15
t
q
(µs)
18
20
25
30
20
CN
CM
CL
CP
CK
--
--
50
DN
DM
DL
DP
DK
--
--
100
EN
EM
EL
EP
EK
--
--
200
--
FM *
FL *
FP
FK
FJ
--
400
--
--
HL
HP
HK
HJ
HH
*
Standard part number.
All other types available only on request.
4
www.irf.com
ST333C..C Series
Bulletin I25170 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
14.1 / 15.1
(0.56 / 0.59)
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
100
M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (°C )
ST333C..C Series
(Single Side Cooled)
R
th J- hs
(DC) = 0.09 K/W
1 30
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
30°
6 0°
90°
12 0°
1 80°
DC
Co nd uc tio n P e rio d
ST 3 3 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
th J-hs
( D C ) = 0 .0 9 K / W
C o nd uc tio n A ng le
30°
60°
90°
120°
180°
500
600
200
300
400
10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
Average On -state Current (A)
Fig. 1 - Current Ratings Characteristics
www.irf.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
