UNISONIC TECHNOLOGIES CO., LTD
USS5350
Preliminary
PNP SILICON TRANSISTOR
50V,3A PNP LOW V
CE(SAT)
TRANSISTOR
FEATURES
* Low collector-emitter saturation voltage V
CE(SAT)
* High collector current capability: I
C
and I
CM
* Higher efficiency leading to less heat generation
* Reduced printed-circuit board requirements.
* Complement: USS4350.
1
SOT-89
Lead-free:
USS5350L
Halogen-free:USS5350G
ORDERING INFORMATION
Normal
USS5350-AB3-R
Ordering Number
Lead Free Plating
USS5350L-AB3-R
Halogen Free
USS5350G-AB3-R
Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., LTD
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QW-R223-005.A
USS5350
Preliminary
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
DC
I
C
-3
A
Collector Current (Note 2)
-5
A
Peak
I
CM
Base Current (DC)
I
B
-0.5
A
Power Dissipation ( T
a
≤25°C)
(Note 2)
P
D
1.6
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-65~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2
2. Device mounted on a ceramic printed-circuit board 7 cm , single-sided copper, tinplated.
PARAMETER
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
Junction To Ambient (Note)
θ
JA
80
2
Note: Device mounted on a ceramic printed-circuit board 7 cm , single-sided copper, tinplated.
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
I
CBO
I
CES
I
EBO
TEST CONDITIONS
V
CB
= -50 V, I
E
= 0
V
CB
= -50 V, I
E
= 0, T
J
= 150°C
V
CE
= -50 V, V
BE
= 0
V
EB
= -5 V, I
C
= 0
I
C
= -0.5 A, I
B
= -50 mA
I
C
= -1 A, I
B
= -50 mA
I
C
= -2 A, I
B
= -100 mA
I
C
= -2 A, I
B
= -200 mA (Note 1)
I
C
= -3 A, I
B
= -300 mA (Note 1)
I
C
= -2 A, I
B
= -100 mA
I
C
= -3 A, I
B
= -300 mA (Note 1)
V
CE
= -2 V, I
C
= -1 A
V
CE
=-2V, I
C
= -0.1 A
V
CE
=-2V, I
C
=-0.5 A
V
CE
=-2V, I
C
= -1 A (Note 1)
V
CE
=-2V, I
C
= -2 A (Note 1)
V
CE
=-2V, I
C
= -3 A (Note 1)
I
C
= -2 A, I
B
= -200 mA, note 1
V
CE
= -5 V , I
C
= -100 mA, f= 100 MHz
V
CB
= -10 V, I
E
= i
e
= 0, f = 1 MHz
MIN
TYP MAX UNIT
-100 nA
-50
μA
-100 nA
-100 nA
-90 mV
-180 mV
-320 mV
-270 mV
-390 mV
-1.1
V
-1.2
V
V
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
BE(SAT)
V
BE(ON)
Dc Current Gain
h
FE
-1.1
200
200
200
130
80
100
450
Equivalent On-Resistance
R
CE(SAT)
Transition Frequency
f
T
Collector Capacitance
C
C
Note: Pulse test: t
P
≤300
μs;
Duty cycle≤2%.
90
135
35
mΩ
MHz
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R223-005.A
USS5350
Preliminary
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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