Power Transistor Arrays
PUA3211
(PU3211)
Silicon PNP epitaxial planar type
For power amplification
Complementary to PUA3111 (PU3111)
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Large collector current I
C
•
PNP 3 elements
9.5
±0.2
1.65
±0.2
8.0
±0.2
20.2
±0.3
Unit: mm
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
Solder Dip
5.3
±0.5
4.4
±0.5
0.8
±0.25
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
V
BE
I
CES
Collector-emitter voltage (Base open)
Base-emitter saturation voltage
tin
Collector-emitter cutoff current (V
BE
=
0)
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
h
FE1
h
FE2
f
T
Emitter-base cutoff current (Collector open)
ce
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
t
on
t
f
t
stg
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Internal Connection
3
2
1
4
5
6
8
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJK00021AED
7
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0.5
±0.15
■
Absolute Maximum Ratings
T
C
=
25°C
0.5
±0.15
1.0
±0.25
2.54
±0.2
Rating
−60
−60
−5
−4
−8
15
Unit
V
V
V
A
A
7
×
2.57 = 17.78
±0.25
C 1.5
±0.5
W
1: Emitter
2: Base
3: Collector
1 2 3 4 5 6 7 8
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
2.4
150
°C
°C
−55
to
+150
Conditions
Min
−60
Typ
Max
−2.0
Unit
V
I
C
= −30
mA, I
B
=
0
ue
V
CE
= −4
V, I
C
= −3
A
V
CE
= −60
V, V
BE
=
0
V
CE
= −30
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
−400
−700
−1
250
µA
µA
V
isc
on
mA
/D
V
CE
= −4
V, I
C
= −1
A
I
C
= −4
A, I
B
= −4
A
I
C
= −4
A
40
an
V
CE
= −4
V, I
C
= −3
A
15
Ma
int
en
−1.5
V
CE
= −10
V, I
C
= −
0.1 A, f
=
1 MHz
I
B1
= −
0.4 A, I
B2
=
0.4 A
V
CC
= −50
V
20
MHz
µs
µs
µs
0.2
0.5
0.2
1
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(1)
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Consult our sales staff in advance for information on the following applications:
–
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–
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