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PUB4520P

产品描述Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
产品类别分立半导体    晶体管   
文件大小206KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
下载文档 详细参数 选型对比 全文预览

PUB4520P概述

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

PUB4520P规格参数

参数名称属性值
厂商名称Panasonic(松下)
零件包装代码SIP
包装说明SIP-10
针数10
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)4 A
集电极-发射极最大电压60 V
配置COMPLEX
最小直流电流增益 (hFE)2000
JESD-30 代码R-PSIP-T10
元件数量4
端子数量10
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型PNP
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)15 MHz
Base Number Matches1

文档预览

下载PDF文档
Power Transistor Arrays
PUB4220
(PU4220)
, PUB4520
(PU4520)
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to PUB4120 (PU4120),
PUB4420 (PU4420)
Features
High forward current transfer ratio h
FE
High-speed switching
PUB4220 (PU4220): PNP 4 elements
PUB4520 (PU4520): PNP 2 elements
×
2 (total 4 elements)
9.5
±0.2
8.0
±0.2
Unit: mm
25.3
±0.2
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.8
±0.25
0.5
±0.15
1.0
±0.25
Parameter
Symbol
Collector-base voltage (Emitter open)
V
CBO
Collector-emitter voltage (Base open)
V
CEO
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Symbol
V
CEO
V
BE
I
CBO
I
CEO
isc
I
EBO
h
FE1
h
FE2 *
an
V
CE(sat)
f
T
t
on
t
stg
t
f
Storage time
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Free
P
Q
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Internal Connection
PUB4220
3
2
1
4
5
6
7
8
9
2
10
1
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
2.54
±0.2
0.5
±0.15
Absolute Maximum Ratings
T
C
=
25°C
Rating
−60
−60
Unit
V
V
V
A
A
W
C 1.5
±0.5
−5
−4
−8
15
3.5
150
−55
to
+150
°C
°C
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
9
×
2.54 = 22.86
±0.25
Conditions
I
C
= −30
mA, I
B
=
0
V
CE
= −3
V, I
C
= −3
A
V
CB
= −60
V, I
E
=
0
V
CE
= −30
V, I
B
=
0
Min
−60
Typ
Max
Unit
V
V
µA
µA
ue
−2.5
−200
−500
−2
V
EB
= −5
V, I
C
=
0
V
CE
= −3
V, I
C
= −
0.5 A
V
CE
= −3
V, I
C
= −3
A
1 000
1 000
on
mA
tin
10 000
−2.0
I
C
= −3
A, I
B
= −12
mA
V
CE
= −10
V, I
C
= −
0.5 A, f
=
1 MHz
I
C
= −3
A
I
B1
= −12
mA, I
B2
=
12 mA
V
CC
= −50
V
15
0.3
V
MHz
µs
µs
µs
Ma
int
en
ce
/D
2.0
0.5
PUB4520
3
4
5
6
7
8
9
10
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00072AED
1

PUB4520P相似产品对比

PUB4520P PU4520P PU4520Q PUB4520 PUB4520Q PUB4220P PU4220P PU4220Q
描述 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
零件包装代码 SIP SIP SIP SIP SIP SIP SIP SIP
包装说明 SIP-10 IN-LINE, R-PSIP-T10 IN-LINE, R-PSIP-T10 SIP-10 SIP-10 SIP-10 IN-LINE, R-PSIP-T10 IN-LINE, R-PSIP-T10
针数 10 10 10 10 10 10 10 10
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
集电极-发射极最大电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
配置 COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX
最小直流电流增益 (hFE) 2000 2000 1000 1000 1000 2000 2000 1000
JESD-30 代码 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10
元件数量 4 4 4 4 4 4 4 4
端子数量 10 10 10 10 10 10 10 10
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz
厂商名称 Panasonic(松下) Panasonic(松下) - Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下)
Base Number Matches 1 1 1 1 1 1 - -

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