3.4 V, 1.2 W RF Power Amplifier IC
V 1.0
MA02107AF
Features
§
Ideal for Pager Applications
§
+30.8 dBm Output Power
§
30.8 dB Power Gain
§
Single Positive Supply
§
Class AB Bias
§
50 Ohm Input Impedance
§
Single Capacitor Output Match
Functional Schematic
V
DD1
N/C
GND
GND
RF IN
GND
GND
N/C
V
DD2
GND
GND
GND
RF OUT/V
DD3
GND
GND
N/C
Description
The MA02107AF is a three stage power amplifier,
designed for paging applications to have an output
power of +30.8 dBm with an input power of 0 dBm.
This power amplifier operates at +3.4 volts with
55% typical power added efficiency.
The
MA02107AF is mounted in a standard outline 16-pin
TSSOP plastic package.
The MA02107AF is fabricated using M/A-COM’s
self-aligned MSAG
®
-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.
Pin Configuration
Pin
1
2
3
4
5
6
7
8
Function
V
DD1
N/C
GND
GND
RF
IN
GND
GND
N/C
N/C
GND
GND
RF
OUT
/V
DD3
GND
GND
GND
V
DD2
Description
First Stage Supply Voltage
Not Connected
Ground
Ground
RF Input
Ground
Ground
Not Connected
Not Connected
Ground
Ground
RF Output/Third Stage Supply
Ground
Ground
Ground
Second Stage Supply Voltage
Ordering Information
Part Number
MA02107AF-R7
MA02107AF-R13
MA02107AF-SMB
Description
7 inch, 1000 piece reel
13 inch, 3000 piece reel
Sample Test Board
9
10
11
12
13
14
15
16
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
1
Part Description Power Amplifier IC
3.4 V, 1.2 W RF
Electrical Specifications: T
S
= 35 °C
1
, Z
0
= 50
Ω
2,3
Parameter
Frequency
Output Power
Power Gain
Power Added Efficiency
Input Return Loss
2
nd
Harmonics
3
rd
Harmonics
Thermal Resistance
Stability
Test Conditions
Units
MHz
dBm
dB
%
dB
dBc
dBc
o
C/W
Min
900
30.0
45
10
Typ
30.8
30.8
55
15
-35
-50
41
Max
942
MA02107AF
V 1.0
-29
-45
3
rd
Stage FET to solder point of pin 13
+3.0 V < V
CC
< +5.0 V, P
OUT
< +31 dBm,
VSWR < 5:1, -40ºC < T
C
< +85ºC, RBW
= 3 MHz max hold
All spurs < -60 dBc
1. Ts is the temperature measured at the soldering point of pin 13.
2. Unless otherwise specified, input power is 0 dBm, V
DD
is +3.45 V, and test frequency is 900 MHz.
3. The output is externally matched to 50 ohms.
Absolute Maximum Ratings
1
Parameter
Max Input Power
Operating Voltages
Operating Temperature, Ts
Channel Temperature
Storage Temperature
Absolute Maximum
+6 dBm
+5.0 volts
-40 °C to +70 °C
+150 °C
-40 °C to +150 °C
1. Exceeding any one or combination of these limits may cause permanent damage.
Application Information
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.
Board Layout
Sample Test Board
50 Ohm Lead Transition
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
2
Part Description Power Amplifier IC
3.4 V, 1.2 W RF
Output Match Impedance (as seen from pin 12)
170
MA02107AF
V 1.0
0.2
180
0
0.5
-170
160
-
925 MHz
900 MHz
8.4 - j9.2
Ω
850 MHz
0
-15
40
-1
1
Typical Performance Curves
Output Power and PAE vs. Input Power
40
η
35
P
OUT
, Output Power (dBm)
50
Pwr Added Efficiency
(%)
50
η
40
60
30
P
OUT
25
P
OUT
(dBm) and
20
ƒ
= 901 MHz
V
DD
= 3.4 V
15
10
-10
-5
0
P
IN
, Input Power (dBm)
Output Power and PAE vs. Supply Voltage
35
30
P
OUT
, Output Power (dBm)
25
P
OUT
20
15
10
5
0
0.0
ƒ
= 901 MHz
P
IN
= 0 dBm
40
30
20
10
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DD
, Supply Voltage (Volts)
3.5
4.0
70
60
η,
Pwr Added Efficiency (%)
50
η
P
OUT
, Output Power (dBm)
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
-80
-90
-100
-110
-12
0
-1
30
Output Power, PAE, and VSWR vs. Fequency
60
η
3:1
40
30
30
P
OUT
20
2:1
20
10
10
VSWR
0
5
0
800
850
900
ƒ,
Frequency (MHz)
950
1:1
1000
Harmonics
40
30
20
10
0
-10
-20
-30
-40
ƒο
2ƒο
3ƒο
Frequency
4ƒο
5ƒο
ƒ
ο
= 901 MHz
P
IN
= 0 dBm
V
DD
= 3.4 V
3
Part Description Power Amplifier IC
3.4 V, 1.2 W RF
Application Schematic
+V
DD
(+3.4V)
C1
1
MA02107AF
V 1.0
C2
16
15
14
13
12
11
10
9
L1
N/C
2
3
RF
INPUT
C3
4
5
6
7
RF
OUTPUT
T1
C5
C4
N/C
N/C
8
List of components:
C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 6.8 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.19" of 50 ohm grounded coplanar waveguide (60 mil GETEK board)
TSSOP-16 Package
Dimensions in
millimeters
SYMBOL
A
A1
A2
b
C
D
E
E1
e
L
L1
y
θ
MIN
1.05
0.05
—
0.20
—
4.90
6.20
4.30
—
0.50
0.90
—
0°
NOM
1.10
0.10
1.00
0.25
0.127
5.075
6.40
4.40
0.65
0.60
1.00
—
4°
MAX
1.20
0.15
1.05
0.28
—
5.10
6.60
4.50
—
0.70
1.10
0.10
8°
Dimensions in inches
MIN
0.041
0.002
—
0.008
—
0.193
0.244
0.169
—
0.020
0.035
—
0°
NOM
0.043
0.004
0.039
0.010
0.005
0.200
0.252
0.173
0.025
0.024
0.039
—
4°
MAX
0.047
0.006
0.041
0.011
—
0.201
0.260
0.177
—
0.028
0.043
0.004
8°
NOTES:
1.
2.
3.
4.
5.
6.
Controlling dimension: mm
Lead frame material: EFTEC 64
Dimension “D” does not include mold flash, protrusions or gate burrs
Dimension “E” does not include interlead flash or protrusions
Tolerance: ±0.254 mm (±0.010″) unless otherwise specified
End flash max: 0.12 mm (0.005
″)
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
4
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