RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier
housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP
on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and
high reliability. This product is specifically designed as a final stage for 802.11a equipment in
the 4.9 GHz to 5.9GHz band. It can be run from a 3V to 6V supply. Optimized on-chip imped-
ance matching circuitry provides a 50 nominal RF input impedance. A single external output
allows for matching circuit covers the entire 4.9GHz to 5.9GHz band. The external output
match allows for load line optimization for other applications or optimized for other applications
or optimized performance over narrower bands. It is designed as a drop in replacement for sim-
ilar parts in its class. This product is available in RoHS Compliant and Green package with
matte tin finish, designated by the “Z” package suffix.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
Features
802.11a 54Mb/s Class AB Per-
formance
P
OUT
=18dBm at 3% EVM, 3.3V,
210mA
High Gain=27dB
Output Return Loss <12dB for
Linear Tune
On-Chip Output Power Detector
Simultaneous 4.9GHz to 5.9GHz
Broadband
Robust - Survives RF Input
Power=+20dBm
Power Up/Down Control <1s
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Applications
802.11a WLAN, OFDM, 5.8GHz
ISM Band
802.16 WiMax, Fixed Wireless,
UNII
Parameter
Frequency of Operation
Output Power at 1dB Compression
Gain
Output power
Third Order Intermod
Noise Figure, (NF)
Worst Case Input Return Loss
Worst Case Output Return Loss
Output Voltage Range
V
CC
Quiescent Current
Power Up Control Current
Min.
4900
24.0
27.5
22.0
Specification
Typ.
26.5
25.5
29.5
24.0
18.0
18.0
-38.0
5.7
15.0
12.0
0.8 to 1.5
165
1.5
Max.
5900
Unit
MHz
dBm
dBm
dB
dB
dBm
dBm
dBc
dB
dB
dB
V
mA
mA
uA
°C/W
Condition
4.9GHz
5.875GHz
4.9GHz
5.875GHz
5.15GHz, 3% EVM 802.11a 54Mb/s
5.875GHz
5.875MHz, P
OUT
=15dBm per tone
5.875GHz
4.9GHz to 5.875GHz
4.9GHz to 5.875GHz
P
OUT
=7dBm to 23dBm
V
PC
=3.3V (I
VPC1
+I
VPC2
+I
VPC3
)
V
PC
=0V
junction - lead
31.5
26.0
-34.0
11.0
8.0
130
190
100
Off V
CC
Leakage Current
5
Thermal Resistance
28
Test Conditions: Z
0
=50, V
CC
=V
PC
=3.3V, I
CQ
=165mA, T
BP
=30°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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