6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
| 参数名称 | 属性值 |
| 厂商名称 | Renesas(瑞萨电子) |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (ID) | 6 A |
| 最大漏源导通电阻 | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-205AF |
| JESD-30 代码 | O-MBCY-W3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 18 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| FSL23A0R4 | FSL23A0D3 | FSL23A0D1 | FSL23A0R3 | FSL23A0R1 | |
|---|---|---|---|---|---|
| 描述 | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 6A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V |
| 最大漏极电流 (ID) | 6 A | 6 A | 6 A | 6 A | 6 A |
| 最大漏源导通电阻 | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-205AF | TO-205AF | TO-205AF | TO-205AF | TO-205AF |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 18 A | 18 A | 18 A | 18 A | 18 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
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