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MMBTA65D87Z

产品描述Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
产品类别分立半导体    晶体管   
文件大小616KB,共13页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
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MMBTA65D87Z概述

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

MMBTA65D87Z规格参数

参数名称属性值
厂商名称Fairchild
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)1.2 A
集电极-发射极最大电压30 V
配置DARLINGTON
最小直流电流增益 (hFE)20000
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz
Base Number Matches1

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MPSA65 / MMBTA65 / PZTA65
MPSA65
MMBTA65
C
PZTA65
C
E
C
B
E
C
B
TO-92
E
SOT-23
Mark: 2W
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
30
10
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA65
625
5.0
83.3
200
Max
*MMBTA65
350
2.8
357
**PZTA65
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
©
1997 Fairchild Semiconductor Corporation
A65, Rev A

MMBTA65D87Z相似产品对比

MMBTA65D87Z MPSA65D26Z PZTA65D84Z
描述 Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
厂商名称 Fairchild Fairchild Fairchild
包装说明 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown compliant unknow
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 1.2 A 1.2 A 1.2 A
集电极-发射极最大电压 30 V 30 V 30 V
配置 DARLINGTON DARLINGTON DARLINGTON
最小直流电流增益 (hFE) 20000 20000 20000
JESD-30 代码 R-PDSO-G3 O-PBCY-T3 R-PDSO-G4
元件数量 1 1 1
端子数量 3 3 4
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR ROUND RECTANGULAR
封装形式 SMALL OUTLINE CYLINDRICAL SMALL OUTLINE
极性/信道类型 PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES NO YES
端子形式 GULL WING THROUGH-HOLE GULL WING
端子位置 DUAL BOTTOM DUAL
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 -

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