DATASHEET
ISL70244SEH, ISL73244SEH
19MHz Radiation Hardened 40V Dual Rail-to-Rail Input-Output, Low-Power
Operational Amplifier
The
ISL70244SEH
and
ISL73244SEH
(ISL7x244SEH) feature
two low-power amplifiers optimized to provide maximum
dynamic range. These operational amplifiers (op amps)
feature a unique combination of rail-to-rail operation on the
input and output and a slew enhanced front end that provides
ultra fast slew rates positively proportional to a given step size.
These features increase accuracy under both periodic and
transient conditions. The ISL7x244SEH also offers low power,
low offset voltage, and low temperature drift, which makes it
ideal for applications requiring both high DC accuracy and AC
performance. With <5µs recovery for Single Event Transients
(SET) (LET
TH
= 86.4MeV•cm
2
/mg), the number of filtering
components needed is drastically reduced. The ISL7x244SEH
is also immune to single-event latch-up because it is fabricated
in the Renesas proprietary PR40 Silicon On Insulator (SOI)
process.
The amplifiers are designed to operate over a single supply
range of 2.7V to 40V or a split supply voltage range of ±1.35V to
±20V. Applications for these amplifiers include precision
instrumentation, data acquisition, precision power supply
controls, and process controls.
The ISL7x244SEH is available in a 10 Ld hermetic ceramic
flatpack that operates across the temperature range of -55°C
to +125°C.
FN8592
Rev 4.00
Aug 16, 2019
Features
• Electrically screened to DLA SMD #
5962-13248
Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5µs recovery from SET (LET
TH
= 86.4MeV•cm
2
/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
• Wide single and dual supply range. . . 2.7V to 40V maximum
•
•
•
•
Low input offset voltage . . . . . . . 400µV (+25°C, maximum)
Low current consumption (per amplifier) . . . . 1.2mA, typical
No phase reversal with input overdrive
Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/µs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• ISL70244SEH radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
• ISL73244SEH radiation acceptance (see TID report)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
• SEE hardness (see SEE report for details)
- SEL/SEB LET
TH
(V
S
= ±19V) . . . . . . . . . 86.4MeV•cm
2
/mg
Related Literature
For a full list of related documents, visit our website:
•
ISL70244SEH
and
ISL73244SEH
device pages
Applications
• Precision instruments
• Active filter blocks
• Data acquisition
• Power supply control
• Process control
I
LOAD
Rs
L
O
A
D
V+
1400
1200
CAPTURED EVENTS
1000
800
600
400
200
0
0
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
2.0
5
1
V
SRC
+
-
R
3
R
1
R
2
-
ISL7x244SEH
V
OUT
R
1
= R
3
= 10kO
R
2
= R
4
= 100kO
Gain = R
2
/R
1
= 10
V+ = 36V; V- = 0V; V
REF
= 18V
V
OUT
= V
REF
+ Gain(I
LOAD
* R
S
)
+
R
4
V-
V
REF
TRANSIENT DURATION (µs)
FIGURE 1. TYPICAL APPLICATION: SINGLE-SUPPLY, HIGH-SIDE
CURRENT SENSE AMPLIFIER
FIGURE 2. TYPICAL SINGLE EVENT TRANSIENT DURATION AT +25°C
LET = 60MeV•cm
2
/ mg IN UNITY GAIN (V
S
= ±18V)
FN8592 Rev 4.00
Aug 16, 2019
Page 1 of 24
ISL70244SEH, ISL73244SEH
Pin Configuration
10 LD FLATPACK
TOP VIEW
OUT
A
-IN
A
+IN
A
NC
V
-
1
2
3
4
5
10
9
V
+
OUT
B
-IN
B
+IN
B
LID
-
+
+
-
8
7
6
Pin Descriptions
PIN NUMBER
5
7
8
9
10
1
2
4
3
6
PIN NAME
V
-
+IN
B
-IN
B
OUT
B
V
+
OUT
A
-IN
A
NC
+IN
A
LID
V
+
600Ω
-IN
600Ω
+IN
OUT
V
-
CIRCUIT 2
V
-
CIRCUIT 3
V
+
V
+
CAPACITIVELY
TRIGGERED ESD
CLAMP
EQUIVALENT ESD CIRCUIT
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 3
Circuit 2
Circuit 1
-
Circuit 1
NA
DESCRIPTION
Negative power supply
Amplifier B noninverting input
Amplifier B inverting input
Amplifier B output
Positive power supply
Amplifier A output
Amplifier A inverting input
This pin is not electrically connected internally
Amplifier A noninverting input
Unbiased, tied to package lid
V
-
CIRCUIT 1
FN8592 Rev 4.00
Aug 16, 2019
Page 2 of 24
ISL70244SEH, ISL73244SEH
Ordering Information
ORDERING SMD
NUMBER
(Note
2)
5962F1324801VXC
5962F1324801V9A
N/A
N/A
5962L1324802VXC
5962L1324802V9A
N/A
N/A
N/A
NOTES:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb
and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
3. The /PROTO and /SAMPLE parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended
for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across the temperature range specified in the
DLA SMD and are in the same form and fit as the qualified device. The /SAMPLE die is capable of meeting the electrical limits and conditions
specified in the DLA SMD at +25°C only. The /SAMPLE is a die and does not receive 100% screening across the temperature range to the DLA SMD
electrical limits. These part types do not come with a certificate of conformance because there is no radiation assurance testing and they are not
DLA qualified devices.
4. The evaluation board uses the /PROTO parts. The /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE)
immunity.
PART NUMBER
(Note
1)
ISL70244SEHVF
ISL70244SEHVX
ISL70244SEHF/PROTO
(Note
3)
ISL70244SEHX/SAMPLE
(Note
3)
ISL73244SEHVF
ISL73244SEHVX
ISL73244SEHF/PROTO
(Note
3)
ISL73244SEHF/SAMPLE
(Note
3)
ISL70244SEHEV1Z (Note
4)
N/A
N/A
Evaluation Board
RADIATION HARDNESS
(Total Ionizing Dose)
HDR to 300krad(Si),
LDR to 50krad(Si)
N/A
N/A
LDR to 50krad(Si)
TEMP RANGE (°C)
-55 to +125
-55 to +125
-55 to +125
+25
-55 to +125
-55 to +125
-55 to +125
+25
PACKAGE
(RoHS Compliant)
10 Ld Flatpack
Die
10 Ld Flatpack
Die
10 Ld Flatpack
Die
10 Ld Flatpack
Die
K10.A
K10.A
K10.A
K10.A
PKG.
DWG. #
FN8592 Rev 4.00
Aug 16, 2019
Page 3 of 24
ISL70244SEH, ISL73244SEH
Absolute Maximum Ratings
Maximum Supply Voltage Differential (V
+
to V
-
) . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage Differential (V
+
to V
-
) (Note
7)
. . . . . . . . . . . 38V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . 42V or (V
-
- 0.5V) to V
+
+ 0.5V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . 42V or (V
-
- 0.5V) to V
+
+ 0.5V
Max/Min Input Current for Input Voltage >V
+
or <V
-
. . . . . . . . . . . . ±20mA
ESD Tolerance
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
θ
JA
(°C/W)
θ
JC
(°C/W)
10 Ld Flatpack Package (Notes
5, 6).
. . . .
44
10
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Single Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7V to 39.6V
Split Rail Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.35V to ±19.8V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5.
θ
JA
is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See
TB379
for details.
6. For
θ
JC
, the “case temp” location is the center of the package underside.
7. Tested in a heavy ion environment at LET = 86.4MeV
•
cm
2
/mg at +125°C (T
C
) for SEB. See the
Single Event Effects Test Report
for more information.
Electrical Specifications
V
S
= ±19.8V, V
CM
= V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted.
Boldface limits apply across
the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure of a High Dose Rate (HDR) of 50rad(Si)/s to
300rad(Si)/s (ISL70244SEH only) or over a total ionizing dose of 50krad(Si) with exposure at a Low Dose Rate (LDR) of <10mrad(Si)/s.
PARAMETER
Offset Voltage
SYMBOL
V
OS
TEST CONDITIONS
V
CM
= 0V
V
CM
= V
+
to V
-
Offset Voltage Temperature
Coefficient
Input Offset Channel-to-Channel
Match
Input Bias Current
TCV
OS
ΔV
OS
V
CM
= V
+
- 2V to V
-
+ 2V
V
CM
= V
+
V
CM
= V
-
I
B
V
CM
= 0V
V
CM
= V
+
V
CM
= V
-
V
CM
= V
+
- 0.5V
V
CM
= V
-
+ 0.5V
Input Offset Current
I
OS
V
CM
= V
+
to V
-
MIN
(Note
8)
-400
-500
-
-
-
-500
-500
-650
-500
-650
-30
-50
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
V
CMIR
CMRR
V
CM
= V
-
to V
+
V
CM
= V
-
to V
+
V
CM
= V
+
- 0.5V to V
-
+ 0.5V
V
CM
= V
+
- 0.5V to V
-
+ 0.5V
Power Supply Rejection Ratio
PSRR
V
-
= -18V; V
+
= 0.5V to 18V;
V
+
= 18V; V
-
= -0.5V to -18V
R
L
= 10kΩ to ground
V
-
-
70
-
80
-
83
-
90
Output Voltage High (V
OUT
to V
+
)
V
OH
R
L
= No Load
R
L
= 10kΩ
-
-
TYP
25
110
0.5
135
128
210
200
290
200
257
0
0
-
112
-
111
-
128
-
125
-
26
78
MAX
(Note
8)
400
500
-
800
800
500
500
650
500
650
30
50
V
+
-
-
-
-
-
-
-
-
160
175
UNIT
µV
µV
µV/
°
C
µV
µV
nA
nA
nA
nA
nA
nA
nA
V
dB
dB
dB
dB
dB
dB
dB
dB
mV
mV
Open-Loop Gain
A
VOL
FN8592 Rev 4.00
Aug 16, 2019
Page 4 of 24
ISL70244SEH, ISL73244SEH
Electrical Specifications
V
S
= ±19.8V, V
CM
= V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted.
Boldface limits apply across
the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure of a High Dose Rate (HDR) of 50rad(Si)/s to
300rad(Si)/s (ISL70244SEH only) or over a total ionizing dose of 50krad(Si) with exposure at a Low Dose Rate (LDR) of <10mrad(Si)/s. (Continued)
PARAMETER
Output Voltage Low (V
OUT
to V
-
)
SYMBOL
V
OL
TEST CONDITIONS
R
L
= No load
R
L
= 10kΩ
Output Short-Circuit Current
Output Short-Circuit Current
Supply Current/Amplifier
I
SRC
I
SNK
I
S
Sourcing; V
IN
= 0V, V
OUT
= -18V
Sinking; V
IN
= 0V, V
OUT
= +18V
Unity gain
T
A
= +25°C post HDR/LDR
radiation
T
A
= -55°C to +125°C
AC SPECIFICATIONS
Gain Bandwidth Product
Voltage Noise Density
Current Noise Density
Large Signal Slew Rate
GBWP
e
n
i
n
SR
A
V
= 1, R
L
= 10k
f = 10kHz
f = 10kHz
A
V
= 1, R
L
= 10kΩ, V
O
= 10V
P-P
17
-
-
60
19
11.3
0.312
-
-
-
-
-
MHz
nV/√Hz
pA/√Hz
V/µs
MIN
(Note
8)
-
-
10
10
-
-
-
TYP
21
64
-
-
1.6
-
2.2
MAX
(Note
8)
160
175
-
-
2.2
2.2
2.8
UNIT
mV
mV
mA
mA
mA
mA
mA
Electrical Specifications
V
S
= ±2.5V, V
CM
= V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted.
Boldface limits apply across
the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure of a High Dose Rate (HDR) of 50rad(Si)/s to
300rad(Si)/s (ISL70244SEH only) or over a total ionizing dose of 50krad(Si) with exposure at a Low Dose Rate (LDR) of <10mrad(Si)/s.
PARAMETER
Offset Voltage
SYMBOL
V
OS
TEST CONDITIONS
V
CM
= 0V
V
CM
= V
+
to V
-
Offset Voltage Temperature
Coefficient
Input Offset Channel-to-Channel
Match
Input Bias Current
TCV
OS
ΔV
OS
V
CM
= V
+
- 2V to V
-
+ 2V
V
CM
= V
+
V
CM
= V
-
I
B
V
CM
= 0V
V
CM
= V
+
V
CM
= V
-
V
CM
= V
+
- 0.5V
V
CM
= V
-
+ 0.5V
Input Offset Current
I
OS
V
CM
= V
+
to V
-
MIN
(Note
8)
-400
-500
-
-
-
-400
-400
-580
-400
-580
-30
-50
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
V
CMIR
CMRR
V
CM
= V
-
to V
+
V
CM
= V
-
to V
+
V
CM
= V
+
- 0.5V to V
-
+ 0.5V
V
CM
= V
+
- 0.5V to V
-
+ 0.5V
V
-
-
70
-
74
TYP
20
80
0.5
132
127
226
182
260
181
224
0
0
-
92
-
91
-
MAX
(Note
8)
400
500
-
800
800
400
400
580
400
580
30
50
V
+
-
-
-
-
UNIT
µV
µV
µV/
°
C
µV
µV
nA
nA
nA
nA
nA
nA
nA
V
dB
dB
dB
dB
FN8592 Rev 4.00
Aug 16, 2019
Page 5 of 24
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