NEC's NPN SiGe
NESG2031M16
HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
•
•
M16
DESCRIPTION
NEC's NESG2031M16 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
a
NF
G
a
RF
MSG
|S
21E
|
P
1dB
OIP
3
f
T
C
re
I
CBO
DC
I
EBO
h
FE
Notes:
1. MSG = S
21
S
12
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2
NESG2031M16
M16
UNITS
dB
dB
dB
dB
dB
dB
dBm
15.0
19.0
16.0
MIN
TYP
1.3
10.0
0.8
17.0
21.5
18.0
13
23
20
25
0.15
0.25
100
100
130
190
260
1.1
MAX
PARAMETERS AND CONDITIONS
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
CQ
= 20 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 5 mA
3
Output 3rd Order Intercept Point at V
CE
= 3 V, I
CQ
= 20 mA, f = 2 GHz dBm
GHz
pF
nA
nA
California Eastern Laboratories
NESG2031M16
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
2
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
13.0
5.0
1.5
35
175
150
-65 to +150
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
x 1.0 mm (t) glass epoxy PCB.
1.0±0.05
ORDERING INFORMATION
PART NUMBER
NESG2031M16-T3
QUANTITY
10 K pcs
reel
SUPPLYING FORM
1
0.8
+0.07
-0.05
0.15±0.05
0.125
+0.1
-0.05
1.2
+0.07
-0.05
0.8
Pin 1 (Collector), Pin 6
(Emitter) face the perforation
side of the tape
0.4
2
0.4
3
PIN CONNECTIONS
4. Base
1. Collector
5. Emitter
2. Emitter
6. Emitter
3. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
0.5±0.05
4
5
6
zF
11/13/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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