DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2031M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., G
a
= 17.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
NF = 1.3 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 package)
ORDERING INFORMATION
Part Number
NESG2031M16
NESG2031M16-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
13.0
5.0
1.5
35
175
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10394EJ02V0DS (2nd edition)
Date Published July 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003
NESG2031M16
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
f
T
S
21e
NF
NF
G
a
G
a
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
−
−
130
−
−
190
100
100
260
nA
nA
−
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C (set)
= 20 mA (RF OFF),
f = 2 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
20
16.0
−
−
15.0
−
−
19.0
−
−
25
18.0
0.8
1.3
17.0
10.0
0.15
21.5
13
−
−
1.1
−
−
−
0.25
−
−
−
GHz
dB
dB
dB
dB
dB
pF
dB
dBm
MSG
Note 3
P
O (1 dB)
3rd Order Intermodulation Distortion
Output Intercept Point
OIP
3
V
CE
= 3 V, I
C (set)
= 20 mA (RF OFF),
f = 2 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
23
dBm
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
zF
130 to 260
2
Data Sheet PU10394EJ02V0DS
NESG2031M16
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
175
0.3
f = 1 MHz
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
0.2
150
100
50
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
V
CE
= 1 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
0.0001
0.4
V
CE
= 2 V
Collector Current I
C
(mA)
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 3 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
25
20
15
10
5
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
1
2
3
4
5
6
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10394EJ02V0DS
3
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
