PRELIMINARY DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (2 W) amplification
P
out
= 33.5 dBm TYP. @ V
CE
= 6 V, P
in
= 20 dBm, f = 460 MHz
P
out
= 31.5 dBm TYP. @ V
CE
= 6 V, P
in
= 20 dBm, f = 900 MHz
• Using UHS2-HV process (SiGe technology), V
CBO
(ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG270034
Order Number
NESG270034-AZ
Package
3-pin power minimold
(34 PKG) (Pb-Free)
NESG270034-T1
NESG270034-T1-AZ
Note1, 2
Quantity
25 pcs
(Non reel)
1 kpcs/reel
• Magazine case
Supplying Form
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1.
Contains Lead in the part except the electrode terminals.
2.
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
25
9.2
2.8
750
1.9
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
Note
Mounted on 34.2 cm
×
0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10577EJ01V0DS (1st edition)
Date Published September 2005 CP(K)
Printed in Japan
©
NEC Compound Semiconductor Devices, Ltd. 2005
NESG270034
THERMAL RESISTANCE (T
A
= +25°C)
Parameter
Termal Resistance from Junction to
Ambient
Note
Symbol
Rth
j-a
Ratings
65
Unit
°C/W
Note
Mounted on 34.2 cm
×
0.8 mm (t) glass epoxy PWB
2
RECOMMENDED OPERATING RANGE (T
A
= +25°C)
Parameter
Collector to Emitter Voltage
Collector Current
Input Power
Note
Symbol
V
CE
I
C
P
in
MIN.
−
−
−
TYP.
6.0
600
20
MAX.
7.2
750
23
Unit
V
mA
dBm
Note
Input power under conditions of V
CE
≤
6.0 V, f = 460 MHz
2
Preliminary Data Sheet PU10577EJ01V0DS
NESG270034
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2.0
Total Power Dissipation P
tot
(mW)
1.6
Mounted on glass epoxy PWB
(34.2 cm
2
×
0.8 mm (t) )
1.2
0.8
Nature Neglect
0.4
0
25
50
75
100
125
150
175
Ambient Temperature T
A
(˚C)
Remark
The graph indicates nominal characteristics.
4
Preliminary Data Sheet PU10577EJ01V0DS
NESG270034
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
OUTPUT POWER, COLLECTOR
CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
35
V
CE
= 6 V, f = 460 MHz
I
C (set)
= 30 mA
1 000
Output Power P
out
(dBm)
30
P
out
800
25
600
20
I
C
400
15
200
η
C
10
0
5
10
15
20
0
25
Input Power P
in
(dBm)
Remark
The graph indicates nominal characteristics.
Collector Current I
C
(mA),
Collector Efficiency
η
C
(%)
Preliminary Data Sheet PU10577EJ01V0DS
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
