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BRY55-600

产品描述Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92
产品类别模拟混合信号IC    触发装置   
文件大小528KB,共3页
制造商Digitron
官网地址http://www.digitroncorp.com
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BRY55-600概述

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92

BRY55-600规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Digitron
Reach Compliance Codeunknown
JESD-609代码e0
峰值回流温度(摄氏度)NOT SPECIFIED
端子面层Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间NOT SPECIFIED
触发设备类型SCR
Base Number Matches1

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High-reliability discrete products
and engineering services since 1977
FEATURES
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage
(R
GK
= 1000Ω, T
J
= 25-125°C)
BRY55-30
BRY55-60
BRY55-100
BRY55-200
BRY55-400
BRY55-500
BRY55-600
Forward current RMS
(all conduction angles)
Peak forward surge current,
T
A
= 25°C
(1/2 cycle, sine wave, 60Hz)
Circuit fusing considerations,
T
A
= 25°C
(t = 8.3ms)
Forward peak gate power,
T
A
= 25°C
Forward peak gate current
, T
A
= 25°C (300µs, 120 PPS)
Operating junction temperature range
@ rated V
RRM
and V
DRM
Storage temperature range
Lead solder temperature
(<1.5mm from case, 10s max)
(1)
Symbol
Value
Unit
V
RRM
, V
DRM
30
60
100
200
400
500
600
0.8
8
0.15
0.1
1
-40 to +125
-40 to +150
+230
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
I
GFM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Amps
°C
°C
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
25°C, R
GK
= 1000Ω unless otherwise noted)
Characteristic
Peak forward blocking current
(V
D
= rated V
DRM
@ T
C
= 125°C)
Peak reverse blocking current
(V
R
= rated V
RRM
@ T
C
= 125°C)
Forward “on” voltage
(2)
I
TM
= 1A peak @ T
A
= 25°C)
Gate trigger current (continuous dc)
(3)
(Anode voltage = 7Vdc, R
L
= 100 Ω)
Symbol
I
DRM
I
RRM
V
TM
I
GT
Min.
-
-
-
-
Max.
100
100
1.7
200
Unit
µA
µA
Volts
µA
Rev. 20130117

BRY55-600相似产品对比

BRY55-600 BRY55-100 BRY55-200 BRY55-30 BRY55-400 BRY55-500 BRY55-60
描述 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 500; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 60; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.1; Capacitance: 5; Package: TO-92
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
触发设备类型 SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 1

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