MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SOT 223 Triac
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and other light
industrial or consumer applications. Supplied in surface mount package for use in
automated manufacturing.
•
•
•
•
•
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Devices Supplied on 1 K Reel
MAC08BT1
Series *
*Motorola preferred devices
TRIAC
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04
(SOT-223)
STYLE 11
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Blocking Voltage(1)
(1/2 Sine Wave, Gate Open, TJ = 25 to 110°C)
MAC08BT1
MAC08DT1
MAC08MT1
On-State Current RMS (TC = 80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power (t < 2.0
µs)
Average Gate Power (TC = 80°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum)
IT(RMS)
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
TL
Symbol
VDRM
200
400
600
0.8
10
0.4
5.0
0.1
–40 to +110
–40 to +150
260
Amps
Amps
A2s
Watts
Watts
°C
°C
°C
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
Symbol
R
θJA
R
θJT
Max
156
25
Unit
°C/W
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
3–40
Motorola Thyristor Device Data
MAC08BT1 Series
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Peak Repetitive Blocking Current
(VD = Rated VDRM Gate Open) TJ = 25°C
TJ = 110°C
Maximum On-State Voltage (Either Direction)
(IT = 1.1 A Peak, TA = 25°C)
Gate Trigger Current (Continuous dc) All Quadrants
(VD = 7.0 Vdc, RL = 100
Ω)
Holding Current (Either Direction)
(VD = 7.0 Vdc, Gate Open,
Initiating Current = 20 mA, Gate Open)
Gate Trigger Voltage (Continuous dc) All Quadrants
(VD = 7.0 Vdc, RL = 100
Ω)
Critical Rate of Rise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS
On-State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150
Ω,
See Figure 10)
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)
Symbol
IDRM
—
—
VTM
IGT
IH
—
—
—
—
—
—
—
—
10
200
1.9
10
5.0
Min
Typ
Max
Unit
µA
µA
Volts
mA
mA
VGT
dv/dtc
—
1.5
—
—
2.0
—
Volts
V/µs
dv/dt
10
—
—
V/µs
0.15
3.8
0.079
2.0
0.091
2.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
inches
mm
0.091
2.3
0.244
6.2
0.984
25.0
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096
2.44
0.059
1.5
0.096
2.44
0.059
1.5
0.096
2.44
0.472
12.0
Figure 1. PCB for Thermal Impedance and
Power Testing of SOT-223
Motorola Thyristor Device Data
3–41
MAC08BT1 Series
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
10
R
θ
JA , JUNCTION TO AMBIENT THERMAL
RESISTANCE,
°
C/W
160
150
140
130
120
110
100
90
80
70
60
50
40
30
TYPICAL
MAXIMUM
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
PCB WITH TAB AREA
AS SHOWN
L
1.0
4
1 2 3
L
0.1
TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C
0.01
0
1.0
2.0
3.0
4.0
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
5.0
MINIMUM
FOOTPRINT = 0.076 cm2
0
2.0
4.0
6.0
FOIL AREA (cm2)
8.0
10
Figure 2. On-State Characteristics
Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
110
α
110
100
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
90
80
70
60
50
40
30
20
0
0.4
0.1
0.2
0.3
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.5
MINIMUM FOOTPRINT
50 OR 60 Hz
dc
α
= 180°
120°
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
30°
α
100
90
80
70
60
50
40
30
20
0
0.1
0.2
1.0 cm2 FOIL AREA
50 OR 60 Hz
dc
α
= 180°
120°
60°
90°
30°
α =
CONDUCTION
ANGLE
60°
90°
α
α
α =
CONDUCTION
ANGLE
0.6
0.3
0.4
0.5
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.7
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature
110
α
Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
110
30°
T(tab) , MAXIMUM ALLOWABLE
TAB TEMPERATURE (
°
C)
105
dc
100
α
= 180°
95
120°
90
85
80
REFERENCE:
FIGURE 1
α
α =
CONDUCTION
ANGLE
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
100
90
80
70
4.0 cm2 FOIL AREA
60
50
dc
α
= 180°
120°
30°
60°
90°
α
α =
CONDUCTION
ANGLE
60°
90°
α
0
0.1
0.6
0.7
0.3
0.4
0.5
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.2
0.8
0
0.1
0.3
0.4
0.5
0.6
IT(RMS), ON-STATE CURRENT (AMPS)
0.2
0.7
0.8
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
Figure 7. Current Derating
Reference: MT2 Tab
3–42
Motorola Thyristor Device Data
MAC08BT1 Series
1.0
0.9
P(AV) , MAXIMUM AVERAGE
POWER DISSIPATION (WATTS)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.3
0.4
0.5
0.6
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.2
0.7
0.8
0.01
0.0001
0.001
0.01
0.1
1.0
t, TIME (SECONDS)
10
100
α
= 180°
dc
90°
60°
α =
CONDUCTION
ANGLE
α
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
α
120°
30°
0.1
Figure 8. Power Dissipation
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
80 mHY
LL
MEASURE I
TRIGGER CONTROL
75 VRMS,
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
CHARGE
CONTROL
RS
56
1N4007
TRIGGER
–
2
1N914
51
G
1
0.047 CS
ADJUST FOR
dv/dt(c)
200 V
+
5
µF
NON-POLAR
CL
Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Q1 (dv/dt)c Test Circuit
10
80°
60°
10
60 Hz
180 Hz
400 Hz
COMMUTATING dv/dt
dv/dt c , (V/
µ
S)
COMMUTATING dv/dt
dv/dt c , (V/
µ
S)
300 Hz
ITM
110°
100°
tw
f
VDRM = 200 V
+
2t1
w
1.0
1.0
VDRM
(di dt)
c
I
+
6f1000
TM
10
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
1.0
60
70
80
90
100
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
Motorola Thyristor Device Data
3–43
MAC08BT1 Series
60
I GT , GATE TRIGGER CURRENT (mA)
600 Vpk
TJ = 110°C
50
STATIC dv/dt (V/
µ
s)
MAIN TERMINAL #2
POSITIVE
10
IGT3
IGT2
IGT4
IGT1
1.0
40
30
MAIN TERMINAL #1
POSITIVE
20
10
100
1000
RG, GATE – MAIN TERMINAL 1 RESISTANCE (OHMS)
10,000
0.1
–40
–20
40
60
80
0
20
TJ, JUNCTION TEMPERATURE (°C)
100
Figure 13. Exponential Static dv/dt versus
Gate – Main Terminal 1 Resistance
Figure 14. Typical Gate Trigger Current Variation
6.0
5.0
4.0
3.0
2.0
1.0
0
–40
MAIN TERMINAL #2
POSITIVE
VGT , GATE TRIGGER VOLTAGE (VOLTS)
1.1
IH , HOLDING CURRENT (mA)
VGT3
VGT2
VGT1
VGT4
MAIN TERMINAL #1
POSITIVE
–20
0
20
40
60
80
100
0.3
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Holding Current Variation
Figure 16. Gate Trigger Voltage Variation
3–44
Motorola Thyristor Device Data
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