电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

GS8662R36GE-200T

产品描述DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
产品类别存储    存储   
文件大小1MB,共34页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准  
下载文档 详细参数 全文预览

GS8662R36GE-200T概述

DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS8662R36GE-200T规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码BGA
包装说明15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
针数165
Reach Compliance Codeunknown
ECCN代码3A991.B.2.B
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B165
JESD-609代码e1
长度17 mm
内存密度75497472 bit
内存集成电路类型DDR SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量165
字数2097152 words
字数代码2000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织2MX36
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.5 mm
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15 mm
Base Number Matches1

文档预览

下载PDF文档
GS8662R08/09/18/36E-250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR-II™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 4 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 144Mb
devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
72Mb SigmaDDR-II™
Burst of 4 SRAM
250 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Clocking and Addressing Schemes
The GS8662R08/09/18/36E SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
Re
co
m
me
nd
ed
for
The GS8662R08/09/18/36E are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 75,497,472-bit (72Mb)
SRAMs. The GS8662R08/09/18/36E SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Ne
w
Parameter Synopsis
-250
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
tKHKH
tKHQV
4.0 ns
0.45 ns
Rev: 1.10 8/2012
No
t
1/34
De
sig
SigmaDDR-II™ Family Overview
n—
Di
sco
nt
inu
ed
Pr
od
u
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaDDR-II B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed.
When a new address is loaded into a x18 or x36 version of the
part, A0 and A1 are used to initialize the pointers that control
the data multiplexer / de-multiplexer so the RAM can perform
"critical word first" operations. From an external address point
of view, regardless of the starting point, the data transfers
always follow the same linear sequence {00, 01, 10, 11} or
{01, 10, 11, 00} or {10, 11, 00, 01} or {11, 00, 01, 10} (where
the digits shown represent A1, A0).
Unlike the x18 and x36 versions, the input and output data
multiplexers of the x8 and x9 versions are not preset by
address inputs and therefore do not allow "critical word first"
operations. The address fields of the x8 and x9 SigmaDDR-II
B4 RAMs are two address pins less than the advertised index
depth (e.g., the 8M x 8 has a 2M addressable index, and A0 and
A1 are not accessible address pins).
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
© 2005, GSI Technology

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2128  855  446  631  689  43  18  9  13  14 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved