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SGB15UFS

产品描述Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
产品类别分立半导体    二极管   
文件大小160KB,共2页
制造商SSDI
官网地址http://www.ssdi-power.com/
下载文档 详细参数 全文预览

SGB15UFS概述

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

SGB15UFS规格参数

参数名称属性值
厂商名称SSDI
包装说明HERMETIC SEALED PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码E-XALF-W2
元件数量1
端子数量2
最大输出电流0.06 A
封装主体材料UNSPECIFIED
封装形状ELLIPTICAL
封装形式LONG FORM
认证状态Not Qualified
最大反向恢复时间0.06 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

下载PDF文档
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SGB10UF
and
SGB35UF
60 mA
1000
3500 VOLTS
60 nsec
HIGH VOLTAGE
RECTIFIER
FEATURES:
Ultra Fast Recovery: 60nsec Maximum
PIV to 3500 Volts
Hermetically Sealed
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
Micro Miniature Package
TX, TXV, and Space Level Screening
Available7/
Designer’s Data Sheet
SGB
___
___
Screening
7/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Recovery Time
UF = Ultra Fast
Voltage/Family
10 = 1000V
15 = 1500V
20 = 2000V
25 = 2500V
30 = 3000V
35 = 3500 V
UF
ELECTRICAL CHARACTERISTICS
Part
Number
Symbol
Units
Conditions
SGB10UF
SGB15UF
SGB20UF
SGB25UF
SGB30UF
SGB35UF
Peak
Inverse
Voltage
PIV
Volts
25°C
Average
Rectifier
Current
I0
mA
100°C
Maximum
Reverse
Current
IR @ PIV
μA
25°C
100°C
Maximu
m
Forward
Voltage
VF 2/
Volts
25°C
Maximum
Surge
Current
(1 Cycle)
IFSM
Amps
25°C
Maximum
Reverse
Recovery
Time
tRR 5/
nsec
25°C
Maximum
Junction
Capacitance
CJ
pF
V
R
= 100V
f
T
= 1MHZ
Typical
Thermal
Impedance
θ
JL
°C/W
L = 1/4"
1000
1500
2000
2500
3000
3500
60
60
60
60
60
60
45
45
45
45
45
45
0.1
0.1
0.1
0.1
0.1
0.1
10
10
10
10
10
10
9.5
9.5
9.5
9.5
9.5
9.5
5
5
5
5
5
5
60
60
60
60
60
60
1.0
1.0
1.0
1.0
1.0
1.0
Axial
185
185
185
185
185
185
NOTES:
1. Operating and testing over 10,000 V/inch may require encapsulation or immersion in suitable dielectric
material.
2. IF = I0; Maximum forward voltage measured with instantaneous forward pulse of 300msec minimum.
3. Maximum lead temperature for soldering is 250oC, 3/8" from case for 5 sec maximum.
4. Operating and Storage temperature: -65 to +175oC.
5. Reverse Recovery Test Conditions: IF = 50mA, IR = 100mA, IRR = 25mA, TA = 25oC.
6. Consult manufacturing for operating curves.
7. Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0003F
DOC

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