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12105K4R7BASTR

产品描述CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402
产品类别无源元件   
文件大小168KB,共19页
制造商AVX
下载文档 详细参数 全文预览

12105K4R7BASTR概述

CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402

电容, 薄膜/FOIL, 二氧化硅和氮化, 25 V, 0.0000047 uF, 表面贴装, 0402

12105K4R7BASTR规格参数

参数名称属性值
负偏差2.13 %
最小工作温度-55 Cel
最大工作温度125 Cel
正偏差2.13 %
额定直流电压urdc25 V
加工封装描述CHIP, ROHS COMPLIANT
each_compliYes
欧盟RoHS规范Yes
中国RoHS规范Yes
状态Active
电容类型FILM CAPACITOR
电容4.70E-6 µF
电介质材料SILICON DIOXIDE AND NITRIDE
jesd_609_codee3
制造商系列ACCU-P
安装特点SURFACE MOUNT
包装形状RECTANGULAR PACKAGE
包装尺寸SMT
cking_methodTR, 7/13 INCH
seriesSIZE(ACCU-P)
尺寸编码0402
温度系数-/+30ppm/Cel
端子涂层MATTE TIN OVER NICKEL
端子形状WRAPAROUND
heigh0.4000 mm
length1 mm
width0.5500 mm
dditional_featureCAPACITANCE TOLERANCE IS 0.1 PICO FARAD

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Accu-F
®
/ Accu-P
®
Thin-Film Technology
THE IDEAL CAPACITOR
The non-ideal characteristics of a real capacitor can be
ignored at low frequencies. Physical size imparts inductance
to the capacitor and dielectric and metal electrodes result in
resistive losses, but these often are of negligible effect on the
circuit. At the very high frequencies of radio communication
(>100MHz) and satellite systems (>1GHz), these effects
become important. Recognizing that a real capacitor will
exhibit inductive and resistive impedances in addition to
capacitance, the ideal capacitor for these high frequencies is
an ultra low loss component which can be fully characterized
in all parameters with total repeatability from unit to unit.
Until recently, most high frequency/microwave capacitors
were based on fired-ceramic (porcelain) technology. Layers
of ceramic dielectric material and metal alloy electrode paste
are interleaved and then sintered in a high temperature oven.
This technology exhibits component variability in dielectric
quality (losses, dielectric constant and insulation resistance),
variability in electrode conductivity and variability in physical
size (affecting inductance). An alternate thin-film technology
has been developed which virtually eliminates these vari-
ances. It is this technology which has been fully incorporated
into Accu-F
®
and Accu-P
®
to provide high frequency capaci-
tors exhibiting truly ideal characteristics.
The main features of Accu-F
®
and Accu-P
®
may be summa-
rized as follows:
• High purity of electrodes for very low and repeatable
ESR.
• Highly pure, low-K dielectric for high breakdown field,
high insulation resistance and low losses to frequencies
above 40GHz.
• Very tight dimensional control for uniform inductance,
unit to unit.
• Very tight capacitance tolerances for high frequency
signal applications.
This accuracy sets apart these Thin-Film capacitors from
ceramic capacitors so that the term Accu has been
employed as the designation for this series of devices, an
abbreviation for “accurate.”
THIN-FILM TECHNOLOGY
Thin-film technology is commonly used in producing semi-
conductor devices. In the last two decades, this technology
has developed tremendously, both in performance and in
process control. Today’s techniques enable line definitions of
below 1μm, and the controlling of thickness of layers at 100Å
(10
-2
μm). Applying this technology to the manufacture of
capacitors has enabled the development of components
where both electrical and physical properties can be tightly
controlled.
The thin-film production facilities at AVX consist of:
• Class 1000 clean rooms, with working areas under
laminar-flow hoods of class 100, (below 100 particles
per cubic foot larger than 0.5μm).
• High vacuum metal deposition systems for high-purity
electrode construction.
• Photolithography equipment for line definition down to
2.0μm accuracy.
• Plasma-enhanced CVD for various dielectric deposi-
tions (CVD=Chemical Vapor Deposition).
• High accuracy, microprocessor-controlled dicing saws
for chip separation.
• High speed, high accuracy sorting to ensure strict
tolerance adherence.
1
TERMINATION
ALUMINA
ELECTRODE
SEAL
ELECTRODE
DIELECTRIC
ALUMINA
ACCU-P
®
CAPACITOR
6
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