EMF18 / UMF18N
Transistors
Power management (dual transistors)
EMF18 / UMF18N
2SA1774 and DTC144EE are housed independently in a EMT or UMT package.
!
Application
Power management circuit
!
External dimensions
(Units : mm)
EMF18
0.22
(4)
(5)
(6)
(3)
(2)
!
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
ROHM : EMT6
1.2
1.6
(1)
0.13
Each lead has same dimensions
Abbreviated symbol : F18
!
Structure
Silicon epitaxial planar transistor
UMF18N
(4)
0.65
1.3
0.65
0.7
0.9
(3)
0.5
0.5 0.5
1.0
1.6
0.2
1.25
(3)
(2)
(1)
2.1
0.15
DTr2
R
2
(4)
R
1
Tr1
0.1Min.
0to0.1
ROHM : UMT6
EIAJ : SC-88
(5)
R1=47kΩ
R2=47kΩ
(6)
Abbreviated symbol :F18
!
Packaging specifications
Type
EMF18
UMF18N
EMT6
UMT6
Package
F18
F18
Marking
T2R
TR
Code
3000
Basic ordering unit (pieces)
8000
(1)
!
Equivalent circuits
(6)
Each lead has same dimensions
2.0
(5)
(2)
1/4
EMF18 / UMF18N
Transistors
!
Absolute maximum ratings
(Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−60
−50
−6
−150
150 (TOTAL)
150
−55~+150
Unit
V
V
V
mA
mW
°C
°C
∗
∗
120mW per element must not be exceeded.
DTr2
Limits
Parameter
Symbol
50
V
CC
Supply voltage
−10~+40
V
IN
Input voltage
100
I
C
Collector current
30
I
O
Output current
150(TOTAL)
P
C
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
∗1
Characteristics of built-in transistor.
∗2
120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
!
Electrical characteristics
(Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−6
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
140
4
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−60V
V
EB
=
−6V
I
C
/I
B
=
−50mA/−5mA
V
CE
=
−6V,
I
C
=
−1mA
V
CE
=
−12V,
I
E
= 2mA, f = 100MHz
V
CB
=
−12V,
I
E
= 0A, f = 1MHz
Conditions
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Characteristics
of built-in transistor.
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
3.0
−
−
−
68
−
32.9
0.8
Typ.
−
−
100
−
−
−
250
47
1.0
Max.
0.5
−
300
180
500
−
−
61.1
1.2
Unit
V
V
mV
µA
nA
−
MHz
kΩ
−
Conditions
V
CC
=5V,
I
O
=100µA
V
O
=0.3V,
I
O
=2mA
V
O
=10mA,
I
I
=0.5mA
V
I
=5V
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=5mA
−
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
∗
2/4
EMF18 / UMF18N
Transistors
!
Electrical characteristic curves
Tr1
-50
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Ta = 100°C
25°C
-20
−
40°C
-10
-5
-2
-1
-0.5
-0.2
-0.1
V
CE
=
−6V
-10
-35.0
Ta = 25°C
-31.5
-28.0
-24.5
-100
Ta = 25°C
-500
-450
-400
-350
-300
-8
-80
-6
-21.0
-17.5
-60
-250
-200
-4
-14.0
-10.5
-40
-150
-100
-2
-7.0
-3.5µA
I
B
= 0
-20
-50µA
I
B
= 0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-1
-2
-3
-4
-5
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (
Ι
)
Fig.3 Grounded emitter output
characteristics (
ΙΙ
)
500
Ta = 25°C
V
CE
= -5V
-3V
-1V
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-1
Ta = 100°C
25°C
Ta = 25°C
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
-0.5
200
200
-40°C
-0.2
100
100
I
C
/I
B
= 50
-0.1
20
10
50
50
-0.05
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
V
CE
= -6V
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
Ι
)
Fig.5 DC current gain vs. collector
current (
ΙΙ
)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-1
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
= 10
Ta = 25
°C
V
CE
= -12V
20
Cib
10
-0.5
500
Ta = 25
°C
f
=
1MHz
I
E
= 0A
I
C
= 0A
Co
b
-0.2
200
5
-0.1
Ta = 100°C
25°C
-40°C
100
2
-0.05
50
0.5
1
2
5
10
20
50
100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-0.5
-1
-2
-5
-10
-20
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
3/4
EMF18 / UMF18N
Transistors
DTr2
100
50
OUTPUT CURRENT : Io
(A)
V
O
=0.3V
10m
5m
V
CC
=5V
1k
500
DC CURRENT GAIN : G
I
V
O
=5V
Ta=100°C
25°C
−40°C
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
Ta=−40°C
25°C
100°C
2m Ta=100°C
25°C
1m
−40°C
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
200
100
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
3.0
1
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.9 Input voltage vs. output current
(ON characteristics)
Fig.10 Output current vs. input voltage
(OFF characteristics)
Fig.11 DC current gain vs. output
current
1
500m
OUTPUT VOLTAGE : V
O(on)
(V)
l
O
/l
I
=20
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I
O
(A)
Fig.12 Output voltage vs. output
current
4/4
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