DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
MBD128
PUMD6
NPN/PNP resistor-equipped
transistor
Product specification
Supersedes data of 1997 Dec 15
1999 May 28
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistor
FEATURES
•
Transistors with different polarity, each with a built-in
bias resistor R1 (typ. 4.7 kΩ)
•
No mutual interference between the transistors
•
Simplification of circuit design
•
Reduces number of components and board space.
TR1
handbook, halfpage
PUMD6
6
5
4
R1
5
4
6
TR2
R1
APPLICATIONS
•
Especially suitable for space reduction in interface and
driver circuits
•
Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN/PNP resistor-equipped transistors in an SC-88
(SOT363) plastic package.
PINNING
PIN
1, 4
2, 5
6, 3
MARKING
TYPE NUMBER
PUMD6
MARKING CODE
Dt6
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
1
Top view
2
3
MAM381
1
2
3
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter symbol.
1999 May 28
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C
−
MIN.
PUMD6
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
total power dissipation
300
mW
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
+40
−10
100
100
200
+150
150
+150
V
V
mA
mA
mW
°C
°C
°C
open emitter
open base
open collector
50
50
10
V
V
V
1999 May 28
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
200
−
3.3
−
TYP.
−
−
−
−
−
−
4.7
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
416
PUMD6
UNIT
K/W
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
input resistor
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 1 mA; V
CE
= 5 V
100
1
50
100
−
100
6.1
mV
kΩ
nA
µA
µA
nA
collector-emitter saturation voltage I
C
= 5 mA; I
B
= 0.25 mA
NPN transistor
C
c
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
2.5
pF
PNP transistor
collector capacitance
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
−
3
pF
1999 May 28
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistor
PUMD6
10
3
handbook, halfpage
MGS329
10
3
MGS330
hFE
(1)
VCEsat
(V)
(2)
10
2
(3)
(1) (2) (3)
10
2
10
−1
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
1
10
IC (mA)
10
2
10
10
−1
TR1 (NPN);
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
1
10
IC (mA)
10
2
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
10
3
MGS331
10
3
MGS330
(1)
hFE
(2)
(3)
VCEsat
(V)
10
2
10
2
(1) (2) (3)
10
10
−1
TR2 (PNP);
V
CE
=
−5
V.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
1
10
IC (mA)
10
2
10
10
−1
TR2 (PNP);
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
1
10
IC (mA)
10
2
Fig.5
DC current gain as a function of collector
current; typical values.
Fig.6
Collector-emitter saturation voltage as a
function of collector current; typical values.
1999 May 28
5
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