DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD6; PUMD6
NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2003 Nov 04
2004 Apr 07
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral driver
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
DESCRIPTION
PEMD6; PUMD6
NPN/PNP resistor-equipped transistors (see
“_Data_Sheet_Remark Supersedes data of 2003 Nov 04”
for package details).
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
NPN
PNP
bias resistor
open
TYP.
−
−
−
−
4.7
−
MAX.
50
100
−
−
−
−
UNIT
V
mA
−
−
kΩ
−
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PEMD6
PUMD6
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
PEMD6; PUMD6
SIMPLIFIED OUTLINE AND SYMBOL
PIN
handbook, halfpage
6
MARKING CODE
EIAJ
−
SC-88
D6
D*6
(1)
SOT666
SOT363
NPN/NPN
COMPLEMENT
PEMH7
PUMH7
PNP/PNP
COMPLEMENT
PEMB3
PUMB3
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
5
4
6
5
4
1
2
3
R1
TR1
R1
TR2
4
5
6
1
Top view
2
3
1
MHC028
2
3
2004 Apr 07
2
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
ORDERING INFORMATION
TYPE
NUMBER
PEMD6
PUMD6
PACKAGE
NAME
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
PEMD6; PUMD6
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
−
T
amb
≤
25
°C;
note 1
note 1
notes 1 and 2
−
−
−65
−
−65
T
amb
≤
25
°C;
note 1
note 1
notes 1 and 2
−
−
300
300
mW
mW
200
200
+150
150
+150
mW
mW
°C
°C
°C
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
5
100
100
V
V
V
mA
mA
2004 Apr 07
3
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th(j-a)
thermal resistance from junction to
ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from junction to
ambient
SOT363
SOT666
Note
note 1
note 1
PARAMETER
CONDITIONS
PEMD6; PUMD6
VALUE
UNIT
625
625
K/W
K/W
416
416
K/W
K/W
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
200
−
3.3
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
−
−
2.5
3
pF
pF
TYP.
−
−
−
−
−
−
4.7
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 mA
I
C
= 5 mA; I
B
= 0.25 mA
100
1
50
100
−
100
6.1
mV
kΩ
nA
μA
μA
nA
2004 Apr 07
4
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PACKAGE OUTLINES
Plastic surface-mounted package; 6 leads
PEMD6; PUMD6
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
2004 Apr 07
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
