EMB6 / UMB6N
EMB6FHA / UMB6NFHA
PNP -100mA -50V Complex Digital Transistors
(Bias Resistor Built-in Transistors)
Datasheet
AEC-Q101 Qualified
lOutline
Parameter
Tr1 and Tr2
EMT6
(6)
(1)
(5)
UMT6
(6)
(4)
(1)
(5)
(4)
I
C(MAX.)
R
1
R
2
V
CC
-50V
-100mA
47kW
47kW
(2)
(3)
(2)
(3)
EMB6
EMB6FHA
(SC-107C)
UMB6N
UMB6NFHA
SOT-353 (SC-88)
lFeatures
1) Built-In Biasing Resistors, R
1
= R
2
= 47kW.
2) Two DTA144E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lInner
circuit
OUT
(6)
IN
(5)
OUT
(4)
(1)
GND
(2)
GND
(3)
IN
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging
specifications
Part No.
EMB6
EMB6FHA
UMB6N
UMB6NFHA
Package
EMT6
UMT6
Package
size
(mm)
1616
2021
Taping
code
T2R
TR
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
180
8
8
8,000
3,000
Marking
B6
B6
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
2012.06 - Rev.B
EMB6FHA / UMB6NFHA
EMB6 / UMB6N
lAbsolute
maximum ratings
(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical
characteristics(Ta
= 25°C)
<For Tr1 and Tr2 in common>
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
*1
Data Sheet
Symbol
V
CC
V
IN
I
O
I
C(MAX.)*1
P
D *2
T
j
T
stg
Values
-50
-40
to
+10
-30
-100
150 (Total)
*3
150
-55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
Conditions
V
CC
=
-5V,
I
O
=
-100mA
V
O
=
-0.3V,
I
O
=
-2mA
I
O
/ I
I
=
-10mA
/
-0.5mA
V
I
=
-5V
V
CC
=
-50V,
V
I
= 0V
V
O
=
-5V,
I
O
=
-5mA
-
-
V
CE
=
-10V,
I
E
= 5mA,
f = 100MHz
Min.
-
-3.0
-
-
-
68
32.9
0.8
-
Typ.
-
-
-0.1
-
-
-
47
1
250
Max.
-0.5
-
-0.3
-0.18
-0.5
-
61.1
1.2
-
Unit
V
V
mA
mA
-
kW
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.06 - Rev.B
EMB6FHA / UMB6NFHA
EMB6 / UMB6N
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : I
O
[A]
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
-30
-25
-20
-15
-10
-5
0
Ta=25ºC
I
I
=
-130μA
Fig.4 DC current gain vs. output current
OUTPUT CURRENT : I
O
[mA]
-100μA
-90μA
-80μA
-70μA
-60μA
-50μA
-40μA
-30μA
0
-5
-10
0A
OUTPUT VOLTAGE : V
O
[V]
DC CURRENT GAIN : G
I
-
120μA
-
110μA
OUTPUT CURRENT : I
O
[A]
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.06 - Rev.B
EMB6FHA / UMB6NFHA
EMB6 / UMB6N
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.5 Output voltage vs. output current
OUTPUT VOLTAGE : V
O(on)
[V]
OUTPUT CURRENT : I
O
[A]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/6
2012.06 - Rev.B
EMB6FHA / UMB6NFHA
EMB6 / UMB6N
lDimensions
(Unit : mm)
Data Sheet
EMT6
Patterm of terminal position areas
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
5/6
2012.06 - Rev.B
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