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CY7C185-15VIT

产品描述Standard SRAM, 8KX8, 15ns, CMOS, PDSO28, 0.300 INCH, MO-088, SOJ-28
产品类别存储    存储   
文件大小516KB,共18页
制造商Cypress(赛普拉斯)
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CY7C185-15VIT概述

Standard SRAM, 8KX8, 15ns, CMOS, PDSO28, 0.300 INCH, MO-088, SOJ-28

CY7C185-15VIT规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码SOJ
包装说明0.300 INCH, MO-088, SOJ-28
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间15 ns
I/O 类型COMMON
JESD-30 代码R-PDSO-J28
JESD-609代码e0
长度17.907 mm
内存密度65536 bit
内存集成电路类型STANDARD SRAM
内存宽度8
湿度敏感等级3
功能数量1
端口数量1
端子数量28
字数8192 words
字数代码8000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8KX8
输出特性3-STATE
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码SOJ
封装等效代码SOJ28,.34
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
电源5 V
认证状态Not Qualified
座面最大高度3.556 mm
最大待机电流0.015 A
最小待机电流4.5 V
最大压摆率0.13 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层TIN LEAD
端子形式J BEND
端子节距1.27 mm
端子位置DUAL
宽度7.505 mm
Base Number Matches1

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CY7C185
64-Kbit (8 K × 8) Static RAM
Features
Functional Description
The CY7C185
[1]
is a high-performance CMOS static RAM
organized as 8192 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE
1
), an active HIGH
chip enable (CE
2
), and active LOW output enable (OE) and
tri-state drivers. This device has an automatic power-down
feature (CE
1
or CE
2
), reducing the power consumption by 70%
when deselected. The CY7C185 is in a standard 300-mil-wide
DIP, SOJ, or SOIC package.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE
1
and WE
inputs are both LOW and CE
2
is HIGH, data on the eight data
input/output pins (I/O
0
through I/O
7
) is written into the memory
location addressed by the address present on the address pins
(A
0
through A
12
). Reading the device is accomplished by
selecting the device and enabling the outputs, CE
1
and OE
active LOW, CE
2
active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location
addressed by the information on address pins are present on the
eight data input or output pins.
The input or output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH. A die coat is used to insure alpha immunity.
For a complete list of related documentation,
click here.
High speed
15 ns
Fast t
DOE
Low active power
715 mW
Low standby power
85 mW
CMOS for optimum speed/power
Easy memory expansion with CE
1
, CE
2
and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Available in non Pb-free 28-pin (300-Mil) Molded SOJ, 28-pin
(300-Mil) Molded SOIC and Pb-free 28-pin (300-Mil) Molded
DIP
Logic Block Diagram
I/O
0
INPUT BUFFER
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
CE
1
CE
2
WE
OE
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
ROW DECODER
8K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
SENSE AMPS
I/O
7
A
10
A
11
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at
www.cypress.com.
A
12
A
0
A
9
Cypress Semiconductor Corporation
Document Number: 38-05043 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 26, 2014

 
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