Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element,
| 参数名称 | 属性值 |
| Reach Compliance Code | compliant |
| 标称电路换相断开时间 | 400 µs |
| 配置 | SINGLE |
| 关态电压最小值的临界上升速率 | 500 V/us |
| 最大直流栅极触发电流 | 300 mA |
| 最大直流栅极触发电压 | 3 V |
| 最大维持电流 | 300 mA |
| JESD-30 代码 | O-CXDB-X4 |
| 最大漏电流 | 250 mA |
| 通态非重复峰值电流 | 44000 A |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 最大通态电流 | 2930000 A |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -40 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND |
| 封装形式 | DISK BUTTON |
| 认证状态 | Not Qualified |
| 最大均方根通态电流 | 4600 A |
| 断态重复峰值电压 | 2600 V |
| 重复峰值反向电压 | 2600 V |
| 表面贴装 | YES |
| 端子形式 | UNSPECIFIED |
| 端子位置 | UNSPECIFIED |
| 触发设备类型 | SCR |
| Base Number Matches | 1 |
| T2159N26TOC | T2159N28TOF | T2159N28TOC | T2159N24TOC | T2159N24TOF | T2159N26TOF | T2159N22TOC | |
|---|---|---|---|---|---|---|---|
| 描述 | Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, | Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element | Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, | Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element, | Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element, | Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, | Silicon Controlled Rectifier, 4600A I(T)RMS, 2930000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| 标称电路换相断开时间 | 400 µs | 400 µs | 400 µs | 400 µs | 400 µs | 400 µs | 400 µs |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 关态电压最小值的临界上升速率 | 500 V/us | 1000 V/us | 500 V/us | 500 V/us | 1000 V/us | 1000 V/us | 500 V/us |
| 最大直流栅极触发电流 | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA |
| 最大直流栅极触发电压 | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 最大维持电流 | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA | 300 mA |
| JESD-30 代码 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 | O-CXDB-X4 |
| 最大漏电流 | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA |
| 通态非重复峰值电流 | 44000 A | 44000 A | 44000 A | 44000 A | 44000 A | 44000 A | 44000 A |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 最大通态电流 | 2930000 A | 2930000 A | 2930000 A | 2930000 A | 2930000 A | 2930000 A | 2930000 A |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大均方根通态电流 | 4600 A | 4600 A | 4600 A | 4600 A | 4600 A | 4600 A | 4600 A |
| 断态重复峰值电压 | 2600 V | 2800 V | 2800 V | 2400 V | 2400 V | 2600 V | 2200 V |
| 重复峰值反向电压 | 2600 V | 2800 V | 2800 V | 2400 V | 2400 V | 2600 V | 2200 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 端子形式 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 端子位置 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 触发设备类型 | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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